2N5195
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- Mfr.Part #
- 2N5195
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 4A SOT32-3
- Stock
- 127
- In Stock ：
- 127
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 40W
- hFE Min :
- 20
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1.5A 2V
- Max Power Dissipation :
- 40W
- Voltage - Rated DC :
- -80V
- Height :
- 6.35mm
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 1mA
- Length :
- 25.4mm
- Package / Case :
- TO-225AA, TO-126-3
- Base Part Number :
- 2N51
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Gain Bandwidth Product :
- 2MHz
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- Current Rating :
- -4A
- Pin Count :
- 3
- Radiation Hardening :
- No
- Transition Frequency :
- 2MHz
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Case Connection :
- Isolated
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Frequency :
- 2MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Width :
- 6.35mm
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Max Collector Current :
- 4A
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 4.535924g
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 1A, 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 80V
- Collector Emitter Saturation Voltage :
- -1.2V
- Lead Free :
- Lead Free
- Datasheets
- 2N5195
PNP 150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
2N5195 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 1.5A 2V.With a collector emitter saturation voltage of -1.2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 1A, 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.A transition frequency of 2MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
2N5195 Features
the DC current gain for this device is 20 @ 1.5A 2V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 2MHz
2N5195 Applications
There are a lot of STMicroelectronics
2N5195 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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