2N5195
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- Mfr.Part #
- 2N5195
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 4A SOT32-3
- Stock
- 42,149
- In Stock ：
- 42,149
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 20
- Gain Bandwidth Product :
- 2MHz
- Collector Emitter Saturation Voltage :
- -1.2V
- Collector Base Voltage (VCBO) :
- 80V
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Current Rating :
- -4A
- Mount :
- Through Hole
- Transition Frequency :
- 2MHz
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 80V
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 40W
- Width :
- 6.35mm
- Length :
- 25.4mm
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Package / Case :
- TO-225AA, TO-126-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Lead Free :
- Lead Free
- Case Connection :
- Isolated
- Max Power Dissipation :
- 40W
- Voltage - Rated DC :
- -80V
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 1mA
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Base Part Number :
- 2N51
- Height :
- 6.35mm
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Weight :
- 4.535924g
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 1A, 4A
- Frequency :
- 2MHz
- Element Configuration :
- Single
- Max Collector Current :
- 4A
- Collector Emitter Breakdown Voltage :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1.5A 2V
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Datasheets
- 2N5195
PNP 150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
2N5195 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 1.5A 2V.With a collector emitter saturation voltage of -1.2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 1A, 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.A transition frequency of 2MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
2N5195 Features
the DC current gain for this device is 20 @ 1.5A 2V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 2MHz
2N5195 Applications
There are a lot of STMicroelectronics
2N5195 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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