2N5195

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Mfr.Part #
2N5195
Manufacturer
STMicroelectronics
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 80V 4A SOT32-3
Stock
42,149
In Stock :
42,149

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
150°C TJ
Case Connection :
Isolated
Packaging :
Tube
ECCN Code :
EAR99
Gain Bandwidth Product :
2MHz
hFE Min :
20
Transition Frequency :
2MHz
JESD-609 Code :
e3
Element Configuration :
Single
Weight :
4.535924g
Max Power Dissipation :
40W
Pin Count :
3
Max Collector Current :
4A
Transistor Application :
SWITCHING
Current Rating :
-4A
Base Part Number :
2N51
Current - Collector Cutoff (Max) :
1mA
Lead Free :
Lead Free
Power Dissipation :
40W
Terminal Finish :
Matte Tin (Sn)
Mounting Type :
Through Hole
Collector Emitter Saturation Voltage :
-1.2V
Transistor Element Material :
SILICON
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 1.5A 2V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
REACH SVHC :
No SVHC
Frequency :
2MHz
Height :
6.35mm
Pbfree Code :
yes
Polarity/Channel Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
1.2V @ 1A, 4A
Collector Emitter Voltage (VCEO) :
80V
Voltage - Rated DC :
-80V
Width :
6.35mm
Package / Case :
TO-225AA, TO-126-3
Mount :
Through Hole
Collector Emitter Breakdown Voltage :
80V
Emitter Base Voltage (VEBO) :
5V
Collector Base Voltage (VCBO) :
80V
Length :
25.4mm
Number of Elements :
1
Number of Terminations :
3
Transistor Type :
PNP
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
Number of Pins :
3
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics 2N5195 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Base Part Number:2N51, Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Number of Pins:3, 2N5195 pinout, 2N5195 datasheet PDF, 2N5195 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics 2N5195 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics 2N5195


PNP 150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole

2N5195 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 1.5A 2V.With a collector emitter saturation voltage of -1.2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 1A, 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.A transition frequency of 2MHz is present in the part.Collector current can be as low as 4A volts at its maximum.

2N5195 Features


the DC current gain for this device is 20 @ 1.5A 2V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 2MHz


2N5195 Applications


There are a lot of STMicroelectronics
2N5195 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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