2N5195
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- Mfr.Part #
- 2N5195
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP TO126
- Stock
- 9,951
- In Stock ：
- 9,951
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 40W
- Collector Emitter Voltage (VCEO) :
- 80V
- Element Configuration :
- Single
- Base Part Number :
- 2N51
- Transistor Element Material :
- SILICON
- Width :
- 6.35mm
- Weight :
- 4.535924g
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn)
- Length :
- 25.4mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1.5A 2V
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- -1.2V
- Number of Elements :
- 1
- Current Rating :
- -4A
- hFE Min :
- 20
- Packaging :
- Tube
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-225AA, TO-126-3
- ECCN Code :
- EAR99
- Power Dissipation :
- 40W
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 2MHz
- Current - Collector Cutoff (Max) :
- 1mA
- Voltage - Rated DC :
- -80V
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 1A, 4A
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 80V
- Transition Frequency :
- 2MHz
- Height :
- 6.35mm
- Pbfree Code :
- yes
- Pin Count :
- 3
- Case Connection :
- Isolated
- Radiation Hardening :
- No
- Max Collector Current :
- 4A
- Transistor Type :
- PNP
- Frequency :
- 2MHz
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 80V
- Datasheets
- 2N5195
PNP 150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
2N5195 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 1.5A 2V.With a collector emitter saturation voltage of -1.2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 1A, 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.A transition frequency of 2MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
2N5195 Features
the DC current gain for this device is 20 @ 1.5A 2V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 2MHz
2N5195 Applications
There are a lot of STMicroelectronics
2N5195 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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