2N5192
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- Mfr.Part #
- 2N5192
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 4A SOT32-3
- Stock
- 7,797
- In Stock ：
- 7,797
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 80V
- Surface Mount :
- No
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Length :
- 7.7978mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 1mA
- Number of Elements :
- 1
- Power Dissipation :
- 40W
- Transistor Element Material :
- SILICON
- Halogen Free :
- Halogen Free
- Transition Frequency :
- 2MHz
- Weight :
- 4.535924g
- hFE Min :
- 20
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1.5A 2V
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 11.0998mm
- Number of Terminations :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Base Part Number :
- 2N5192
- Collector Emitter Voltage (VCEO) :
- 80V
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 80V
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Application :
- SWITCHING
- Current Rating :
- 4A
- Published :
- 2000
- Collector Emitter Saturation Voltage :
- 1.4V
- Vce Saturation (Max) @ Ib, Ic :
- 1.4V @ 1A, 4A
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Max Power Dissipation :
- 40W
- Width :
- 2.9972mm
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Max Collector Current :
- 4A
- REACH SVHC :
- No SVHC
- Frequency :
- 2MHz
- Packaging :
- Bulk
- Collector Base Voltage (VCBO) :
- 80V
- Gain Bandwidth Product :
- 2MHz
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 5 Weeks
- Datasheets
- 2N5192
NPN -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2N5192G Overview
In this device, the DC current gain is 20 @ 1.5A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.4V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.4V @ 1A, 4A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).2MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
2N5192G Features
the DC current gain for this device is 20 @ 1.5A 2V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 2MHz
2N5192G Applications
There are a lot of ON Semiconductor
2N5192G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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