2N5116

Manufacturer :

Central Semiconductor

Product Category :

Transistors - JFETs

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 15V

Terminal Position :

BOTTOM

Number of Elements :

1

Element Configuration :

Single

FET Type :

P-Channel

Transistor Element Material :

SILICON

Radiation Hardening :

No

Voltage - Cutoff (VGS off) @ Id :

1V @ 1nA

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Max Power Dissipation :

500mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Operating Mode :

Depletion Mode

Feedback Cap-Max (Crss) :

7 pF

Pbfree Code :

No

Operating Temperature :

-65°C~200°C TJ

Package / Case :

TO-206AA, TO-18-3 Metal Can

FET Technology :

JUNCTION

Current - Drain (Idss) @ Vds (Vgs=0) :

5mA @ 15V

Factory Lead Time :

8 Weeks

Number of Pins :

3

Mounting Type :

Through Hole

HTS Code :

8541.21.00.95

Terminal Form :

Wire

Transistor Application :

SWITCHING

Power - Max :

500mW

Resistance - RDS(On) :

150Ohm

Number of Terminations :

3

Drain-source On Resistance-Max :

150Ohm

JESD-609 Code :

e0

Packaging :

Box

Published :

2001

Terminal Finish :

Tin/Lead (Sn/Pb)