2N3055HG

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Mfr.Part #
2N3055HG
Manufacturer
onsemi
Package / Case
TO-204AA, TO-3
Datasheet
Download
Description
TRANS NPN 60V 15A TO204
Stock
23,377
In Stock :
23,377

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Element Configuration :
Single
hFE Min :
20
Collector Emitter Saturation Voltage :
1.1V
Current Rating :
15A
Base Part Number :
2N3055
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Rated DC :
60V
Number of Terminations :
2
Operating Temperature :
-65°C~200°C TJ
Number of Elements :
1
Collector Emitter Voltage (VCEO) :
3V
Transistor Application :
SWITCHING
Peak Reflow Temperature (Cel) :
260
Max Collector Current :
15A
Pbfree Code :
yes
RoHS Status :
RoHS Compliant
JESD-609 Code :
e3
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 4A 4V
Emitter Base Voltage (VEBO) :
7V
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Finish :
Tin (Sn)
Lead Free :
Lead Free
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
Transistor Type :
NPN
Transistor Element Material :
SILICON
Terminal Form :
PIN/PEG
Collector Emitter Breakdown Voltage :
60V
Vce Saturation (Max) @ Ib, Ic :
3V @ 3.3A, 10A
Number of Pins :
2
Collector Base Voltage (VCBO) :
100V
ECCN Code :
EAR99
Published :
2004
Gain Bandwidth Product :
2.5MHz
Mount :
Through Hole
Case Connection :
COLLECTOR
Transition Frequency :
2.5MHz
Pin Count :
2
Packaging :
Tray
Package / Case :
TO-204AA, TO-3
Mounting Type :
Through Hole
Max Power Dissipation :
115W
Terminal Position :
BOTTOM
Polarity/Channel Type :
NPN
Current - Collector Cutoff (Max) :
700µA
Qualification Status :
Not Qualified
Datasheets
2N3055HG
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N3055HG from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2N3055, Number of Terminations:2, Operating Temperature:-65°C~200°C TJ, Number of Pins:2, Package / Case:TO-204AA, TO-3, Mounting Type:Through Hole, 2N3055HG pinout, 2N3055HG datasheet PDF, 2N3055HG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N3055HG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N3055HG


NPN -65°C~200°C TJ 700μA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole

2N3055HG Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 4V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.When VCE saturation is 3V @ 3.3A, 10A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 15A.In the part, the transition frequency is 2.5MHz.A maximum collector current of 15A volts can be achieved.

2N3055HG Features


the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 2.5MHz


2N3055HG Applications


There are a lot of ON Semiconductor
2N3055HG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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