2N3055HG
- Mfr.Part #
- 2N3055HG
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 15A TO204
- Stock
- 23,377
- In Stock :
- 23,377
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- hFE Min :
- 20
- Collector Emitter Saturation Voltage :
- 1.1V
- Current Rating :
- 15A
- Base Part Number :
- 2N3055
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 60V
- Number of Terminations :
- 2
- Operating Temperature :
- -65°C~200°C TJ
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 3V
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 15A
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Emitter Base Voltage (VEBO) :
- 7V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Terminal Form :
- PIN/PEG
- Collector Emitter Breakdown Voltage :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3.3A, 10A
- Number of Pins :
- 2
- Collector Base Voltage (VCBO) :
- 100V
- ECCN Code :
- EAR99
- Published :
- 2004
- Gain Bandwidth Product :
- 2.5MHz
- Mount :
- Through Hole
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 2.5MHz
- Pin Count :
- 2
- Packaging :
- Tray
- Package / Case :
- TO-204AA, TO-3
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 115W
- Terminal Position :
- BOTTOM
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 700µA
- Qualification Status :
- Not Qualified
- Datasheets
- 2N3055HG

NPN -65°C~200°C TJ 700μA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
2N3055HG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 4V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.When VCE saturation is 3V @ 3.3A, 10A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 15A.In the part, the transition frequency is 2.5MHz.A maximum collector current of 15A volts can be achieved.
2N3055HG Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 2.5MHz
2N3055HG Applications
There are a lot of ON Semiconductor
2N3055HG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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