2N3019

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Mfr.Part #
2N3019
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-205AA, TO-5-3 Metal Can
Datasheet
Download
Description
TRANS NPN 80V 1A TO39
Stock
1,013
In Stock :
1,013

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Radiation Hardening :
No
Collector Emitter Breakdown Voltage :
80V
Current - Collector (Ic) (Max) :
1A
Mount :
Through Hole
Max Operating Temperature :
200°C
Lifecycle Status :
IN PRODUCTION (Last Updated: 3 weeks ago)
Max Collector Current :
1A
Current - Collector Cutoff (Max) :
10μA ICBO
Power Dissipation :
800mW
Package / Case :
TO-205AA, TO-5-3 Metal Can
Transistor Type :
NPN
Published :
2007
Number of Elements :
1
Polarity :
NPN
Packaging :
Bulk
Max Power Dissipation :
800mW
Emitter Base Voltage (VEBO) :
7V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Collector Emitter Breakdown (Max) :
80V
RoHS Status :
Non-RoHS Compliant
Supplier Device Package :
TO-5
Factory Lead Time :
12 Weeks
Collector Emitter Voltage (VCEO) :
80V
Power - Max :
800mW
Collector Base Voltage (VCBO) :
140V
Number of Pins :
3
Operating Temperature :
-65°C~200°C TJ
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 500mA 10V
Min Operating Temperature :
-65°C
Datasheets
2N3019
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. 2N3019 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-205AA, TO-5-3 Metal Can, Number of Pins:3, Operating Temperature:-65°C~200°C TJ, Mounting Type:Through Hole, 2N3019 pinout, 2N3019 datasheet PDF, 2N3019 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. 2N3019 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. 2N3019


NPN -65°C~200°C TJ 10μA ICBO 1 Elements TO-205AA, TO-5-3 Metal Can Bulk Through Hole

2N3019 Overview


This device has a DC current gain of 50 @ 500mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.Single BJT transistor comes in a supplier device package of TO-5.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.The maximum collector current is 1A volts.

2N3019 Features


the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
the supplier device package of TO-5


2N3019 Applications


There are a lot of Microsemi Corporation
2N3019 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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