2N3055AG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

1.1V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Emitter Base Voltage (VEBO) :

7V

Transition Frequency :

0.8MHz

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Max Collector Current :

15A

Packaging :

Tray

JESD-609 Code :

e3

Width :

8.509mm

Max Power Dissipation :

115W

Collector Emitter Voltage (VCEO) :

60V

ECCN Code :

EAR99

Mounting Type :

Through Hole

Terminal Position :

BOTTOM

Length :

39.37mm

Terminal Form :

PIN/PEG

Collector Base Voltage (VCBO) :

200V

Frequency :

6MHz

Height :

26.67mm

Package / Case :

TO-204AA, TO-3

Surface Mount :

No

Voltage - Rated DC :

60V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Operating Temperature :

-65°C~200°C TJ

Vce Saturation (Max) @ Ib, Ic :

5V @ 7A, 15A

Weight :

4.535924g

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 4A 2V

Time@Peak Reflow Temperature-Max (s) :

40

Gain Bandwidth Product :

6MHz

hFE Min :

10

Base Part Number :

2N3055

Transistor Type :

NPN

Transistor Application :

SWITCHING

Current Rating :

15A

REACH SVHC :

No SVHC

Number of Pins :

2

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

60V

Current - Collector Cutoff (Max) :

700µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Case Connection :

COLLECTOR

Factory Lead Time :

13 Weeks

Power Dissipation :

115W

Element Configuration :

Single

Published :

2005

Pin Count :

2

Lead Free :

Lead Free

Pbfree Code :

yes