2N3055

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

7V

Max Collector Current :

15A

hFE Min :

20

Voltage - Rated DC :

60V

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

Polarity/Channel Type :

NPN

Terminal Form :

PIN/PEG

Width :

26.2mm

JESD-609 Code :

e3

Mount :

Chassis Mount, Through Hole

Collector Base Voltage (VCBO) :

100V

Base Part Number :

2N30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

COLLECTOR

Height :

8.7mm

Length :

39.5mm

Transistor Type :

NPN

Collector Emitter Saturation Voltage :

1V

Mounting Type :

Chassis Mount

Vce Saturation (Max) @ Ib, Ic :

3V @ 3.3A, 10A

Pin Count :

2

Current - Collector Cutoff (Max) :

700µA

Gain Bandwidth Product :

3MHz

Power Dissipation :

115W

Max Power Dissipation :

115W

Number of Pins :

2

Collector Emitter Breakdown Voltage :

60V

Terminal Finish :

Tin (Sn)

Operating Temperature :

200°C TJ

VCEsat-Max :

3 V

ECCN Code :

EAR99

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Current :

15A

Transition Frequency :

3MHz

Number of Terminations :

2

Packaging :

Tray

Voltage :

60V

Number of Elements :

1

REACH SVHC :

No SVHC

Terminal Position :

BOTTOM

Collector Emitter Voltage (VCEO) :

60V

Current Rating :

15A

Weight :

4.535924g

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-204AA, TO-3

Pbfree Code :

yes

Max Breakdown Voltage :

100V

Transistor Application :

SWITCHING