2DA1971-7
- Mfr.Part #
- 2DA1971-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 400V 0.5A SOT89-3
- Stock
- 100
- In Stock :
- 100
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 51.993025mg
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Package / Case :
- TO-243AA
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- -400V
- Additional Feature :
- High Reliability
- Gain Bandwidth Product :
- 75MHz
- Transistor Application :
- SWITCHING
- Length :
- 4.6mm
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 400V
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 400V
- REACH SVHC :
- No SVHC
- Packaging :
- Cut Tape (CT)
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Base Part Number :
- 2DA1971
- Current - Collector Cutoff (Max) :
- 100nA
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA 5V
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 400V
- Pbfree Code :
- yes
- Height :
- 1.6mm
- JESD-609 Code :
- e3
- Power Dissipation :
- 1.5W
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 40mA, 200mA
- Transition Frequency :
- 75MHz
- Max Frequency :
- 75MHz
- Case Connection :
- COLLECTOR
- Collector Emitter Saturation Voltage :
- -400mV
- Element Configuration :
- Single
- Published :
- 2014
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 1.5W
- Factory Lead Time :
- 15 Weeks
- Emitter Base Voltage (VEBO) :
- -7V
- ECCN Code :
- EAR99
- Max Collector Current :
- 500mA
- Continuous Collector Current :
- -500mA
- Width :
- 2.6mm
- Number of Terminations :
- 3
- Terminal Form :
- Flat
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-F3
- Datasheets
- 2DA1971-7

PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Cut Tape (CT) Surface Mount
2DA1971-7 Overview
DC current gain in this device equals 140 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -400mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 40mA, 200mA.Single BJT transistor is essential to maintain the continuous collector voltage at -500mA to achieve high efficiency.An emitter's base voltage can be kept at -7V to gain high efficiency.As a result, the part has a transition frequency of 75MHz.Breakdown input voltage is 400V volts.In extreme cases, the collector current can be as low as 500mA volts.
2DA1971-7 Features
the DC current gain for this device is 140 @ 100mA 5V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 40mA, 200mA
the emitter base voltage is kept at -7V
a transition frequency of 75MHz
2DA1971-7 Applications
There are a lot of Diodes Incorporated
2DA1971-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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