2DA1201Y-7
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- Mfr.Part #
- 2DA1201Y-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.8A SOT89-3
- Stock
- 1,068
- In Stock ：
- 1,068
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 1.5W
- Collector Emitter Saturation Voltage :
- -1V
- Max Breakdown Voltage :
- 120V
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 5V
- Base Part Number :
- 2DA1201
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Weight :
- 51.993025mg
- Emitter Base Voltage (VEBO) :
- -7V
- Number of Pins :
- 4
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Factory Lead Time :
- 16 Weeks
- Max Power Dissipation :
- 1.5W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Continuous Collector Current :
- -800mA
- JESD-30 Code :
- R-PSSO-F3
- Transition Frequency :
- 160MHz
- Terminal Form :
- Flat
- REACH SVHC :
- No SVHC
- Additional Feature :
- High Reliability
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2012
- Packaging :
- Cut Tape (CT)
- Frequency :
- 160MHz
- Package / Case :
- TO-243AA
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn)
- Gain Bandwidth Product :
- 160MHz
- Collector Emitter Voltage (VCEO) :
- 120V
- Max Collector Current :
- 800mA
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- -120V
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 120V
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Datasheets
- 2DA1201Y-7
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Cut Tape (CT) Surface Mount
2DA1201Y-7 Overview
In this device, the DC current gain is 120 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.A -800mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.Input voltage breakdown is available at 120V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
2DA1201Y-7 Features
the DC current gain for this device is 120 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at -7V
a transition frequency of 160MHz
2DA1201Y-7 Applications
There are a lot of Diodes Incorporated
2DA1201Y-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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