2DA1201Y-7
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- Mfr.Part #
- 2DA1201Y-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.8A SOT89-3
- Stock
- 1,068
- In Stock ：
- 1,068
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 160MHz
- Pbfree Code :
- yes
- Number of Pins :
- 4
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Flat
- Continuous Collector Current :
- -800mA
- Element Configuration :
- Single
- Published :
- 2012
- Max Breakdown Voltage :
- 120V
- Collector Base Voltage (VCBO) :
- -120V
- Terminal Finish :
- Matte Tin (Sn)
- Factory Lead Time :
- 16 Weeks
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 1.5W
- REACH SVHC :
- No SVHC
- Packaging :
- Cut Tape (CT)
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 160MHz
- Frequency :
- 160MHz
- Package / Case :
- TO-243AA
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Polarity/Channel Type :
- PNP
- Weight :
- 51.993025mg
- Collector Emitter Breakdown Voltage :
- 120V
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 1.5W
- Additional Feature :
- High Reliability
- Base Part Number :
- 2DA1201
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 800mA
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-F3
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- -1V
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- -7V
- Collector Emitter Voltage (VCEO) :
- 120V
- Datasheets
- 2DA1201Y-7
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Cut Tape (CT) Surface Mount
2DA1201Y-7 Overview
In this device, the DC current gain is 120 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.A -800mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.Input voltage breakdown is available at 120V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
2DA1201Y-7 Features
the DC current gain for this device is 120 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at -7V
a transition frequency of 160MHz
2DA1201Y-7 Applications
There are a lot of Diodes Incorporated
2DA1201Y-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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