2729GN-270V

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - RF

Case Connection :

SOURCE

FET Technology :

HIGH ELECTRON MOBILITY

Transistor Application :

AMPLIFIER

Noise Figure :

-

Terminal Form :

Flat

DS Breakdown Voltage-Min :

125 V

Current Rating (Amps) :

-

Supplier Device Package :

55-QP

Additional Feature :

High Reliability

Gain :

15 dB

Type :

RF Power MOSFET

Number of Elements :

1

Current - Test :

60 mA

Package / Case :

55-QP

Frequency :

2.7GHz ~ 2.9GHz

JESD-30 Code :

R-CDFM-F2

Mounting Style :

Flange Mount

Configuration :

Single

Power - Output :

290W

Voltage - Test :

50 V

Surface Mount :

yes

Polarity/Channel Type :

N-Channel

Transistor Element Material :

GALLIUM NITRIDE

Number of Terminals :

2

Operating Mode :

Depletion Mode

Operating Frequency :

2700 MHz to 2900 MHz

Mounting Type :

Surface Mount

Output Power :

270 W

Highest Frequency Band :

S BAND

Package :

Bulk

Terminal Position :

Dual

Voltage - Rated :

125 V

Product Status :

Active

RoHS :

Details

Package Shape :

RECTANGULAR

Reach Compliance Code :

Compliant

Transistor Type :

HEMT

Series :

V