23A512T-E/SN
- Mfr.Part #
- 23A512T-E/SN
- Manufacturer
- Microchip Technology
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC SRAM 512KBIT SPI/QUAD 8SOIC
- Stock
- 19,427
- In Stock :
- 19,427
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- Manufacturer :
- Microchip Technology
- Product Category :
- Memory
- Memory Size :
- 512Kb 64K x 8
- Memory Width :
- 8
- Screening Level :
- TS 16949
- Terminal Position :
- Dual
- Reach Compliance Code :
- Compliant
- Memory Density :
- 524288 bit
- JESD-609 Code :
- e3
- Clock Frequency :
- 16MHz
- Width :
- 3.9 mm
- Mounting Type :
- Surface Mount
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- SMD/SMT
- Organization :
- 64 k x 8
- Base Part Number :
- 23A512
- Manufacturer :
- Microchip Technology Inc
- Access Time :
- 32 ns
- RoHS Status :
- ROHS3 Compliant
- Memory Format :
- SRAM
- Package Shape :
- RECTANGULAR
- Interface Type :
- SDI, SPI, SQI
- Base Product Number :
- 23A512
- Product Status :
- Active
- Supply Voltage-Max (Vsup) :
- 2.2 V
- Length :
- 4.9 mm
- Series :
- --
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Functions :
- 1
- Temperature Grade :
- Automotive
- Operating Temperature :
- -40°C~125°C TA
- Parallel/Serial :
- Serial
- Terminal Form :
- Gull wing
- Memory IC Type :
- STANDARD SRAM
- Supply Voltage-Min (Vsup) :
- 1.7 V
- Frequency :
- 20MHz
- Surface Mount :
- yes
- Number of Pins :
- 8
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Memory Interface :
- SPI - Quad I/O
- Maximum Operating Temperature :
- + 125 C
- Packaging :
- Tape and Reel (TR)
- Published :
- 2012
- Factory Lead Time :
- 19 Weeks
- Package :
- Tape and Reel (TR)
- Seated Height-Max :
- 1.75 mm
- Memory Type :
- Volatile
- Supplier Device Package :
- 8-SOIC
- Terminal Pitch :
- 1.27 mm
- Memory Organization :
- 64K x 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Operating Mode :
- SYNCHRONOUS
- Number of Words :
- 65536 words
- Write Cycle Time - Word, Page :
- --
- JESD-30 Code :
- R-PDSO-G8
- Voltage - Supply :
- 1.7V~2.2V
- Number of Terminals :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- 23A512T-E/SN

Memory Microchip Technology 23A512T-E/SN Overview
Bringing together high-speed functionality and cost-effectiveness, the Memory Microchip Technology 23A512T-E/SN is a cutting-edge SRAM component tailored for high-performance applications requiring efficient and fast data buffering. This integrated circuit features a 512Kbit Static Random Access Memory that operates on the versatile SPI/QUAD interface protocols, encapsulated neatly in an 8SOIC package for streamlined surface mounting. Designed and manufactured by the renowned Microchip Technology, this IC prioritizes reliability and data integrity, making it an exemplary choice for designers aiming to boost their system's performance with rapid read/write operations and low-power consumption. Its compact form factor is specifically engineered for applications where space is at a premium, without compromising on storage capacity or speed.
23A512T-E/SN Features
- 512Kbit SPI/QUAD Interface SRAM
- High-speed data transfer capabilities
- Low-power consumption for energy-efficient designs
- 8SOIC package for efficient PCB real estate usage
- Manufactured by the reliable Microchip Technology
- Stable performance under various temperature ranges
23A512T-E/SN Applications
- Automotive Electronics: Utilized for data buffering in navigation systems and driver assistance electronics.
- Industrial Control Systems: Serves as a dependable memory for PLCs and other control unit applications requiring quick access to data.
- Consumer Electronics: Integrates into devices such as digital cameras and gaming consoles where fast memory read/write speeds are essential.
- Telecommunications: Key component in networking equipments, like routers and switches, for managing high-speed data transactions.
- Medical Devices: Provides reliable data storage in numerous medical diagnostic equipment where accurate and fast memory access is vital.
- Internet of Things (IoT) Devices: Acts as a secondary memory source where persistent and swift memory access is necessary for smart devices.
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