23A512-E/ST
- Mfr.Part #
- 23A512-E/ST
- Manufacturer
- Microchip Technology
- Package / Case
- 8-TSSOP (0.173, 4.40mm Width)
- Datasheet
- Download
- Description
- IC SRAM 512KBIT SPI/QUAD 8TSSOP
- Stock
- 21,803
- In Stock :
- 21,803
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- Manufacturer :
- Microchip Technology
- Product Category :
- Memory
- Clock Frequency :
- 16MHz
- Length :
- 4.4mm
- Memory Organization :
- 64K x 8
- Number of Pins :
- 8
- Product Category :
- SRAM
- Memory Size :
- 512Kb 64K x 8
- Screening Level :
- TS 16949
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Type :
- SYNCHRONOUS
- Mounting Style :
- SMD/SMT
- Series :
- --
- Operating Mode :
- SYNCHRONOUS
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Brand :
- Microchip Technology
- Base Product Number :
- 23A512
- Maximum Operating Temperature :
- + 125 C
- Package / Case :
- 8-TSSOP (0.173, 4.40mm Width)
- Number of Functions :
- 1
- Organization :
- 64 k x 8
- Factory Lead Time :
- 20 Weeks
- Terminal Pitch :
- 0.65mm
- Reach Compliance Code :
- Compliant
- Number of Terminals :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- Seated Height-Max :
- 1.2 mm
- Memory Density :
- 524288 bit
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C~85°C TA
- Memory Width :
- 8
- Terminal Position :
- Dual
- Minimum Operating Temperature :
- - 40 C
- RoHS :
- Details
- Memory Format :
- SRAM
- Access Time :
- 32 ns
- Package Shape :
- RECTANGULAR
- Interface Type :
- SDI, SPI, SQI
- Manufacturer :
- Microchip
- Terminal Form :
- Gull wing
- Supply Voltage-Max (Vsup) :
- 2.2V
- Supplier Device Package :
- 8-TSSOP
- Number of Words :
- 65536 words
- Surface Mount :
- yes
- Number of Terminations :
- 8
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Memory Type :
- Volatile
- Base Part Number :
- 23A512
- Height Seated (Max) :
- 1.2mm
- Parallel/Serial :
- Serial
- Write Cycle Time - Word, Page :
- --
- Product Type :
- SRAM
- Memory Interface :
- SPI - Quad I/O
- Width :
- 3mm
- Supply Voltage-Min (Vsup) :
- 1.7V
- Voltage - Supply :
- 1.7V~2.2V
- Subcategory :
- Memory and Data Storage
- RoHS Status :
- ROHS3 Compliant
- Temperature Grade :
- Automotive
- Product Status :
- Active
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package :
- Tube
- Published :
- 2012
- JESD-30 Code :
- R-PDSO-G8
- Memory IC Type :
- STANDARD SRAM
- Datasheets
- 23A512-E/ST
Memory Microchip Technology 23A512-E/ST Overview
Unlocking the potential of high-performance digital systems, the Memory Microchip Technology 23A512-E/ST stands out as a pivotal component for modern electronic designs. This Integrated Circuit (IC) from Microchip Technology is a 512-Kbit Serial SRAM with SPI (Serial Peripheral Interface) and QUAD interface capabilities, packed efficiently into an 8-TSSOP (Thin Shrink Small Outline Package). Its high-speed data access and low-power consumption make it an excellent choice for applications requiring quick data manipulation and storage without compromising on power efficiency. By integrating this IC into your designs, you're ensuring reliability and scalability, all while maintaining Microchip's commitment to performance that can satisfy the fast-paced demands of contemporary technology.
23A512-E/ST Features
- Capacity: 512 Kbits of serial SRAM storage
- Interface: SPI/QUAD for flexible and fast communication
- Package: 8-TSSOP for a compact footprint
- Low Power Consumption: Ideal for power-sensitive applications
- Manufacturer: Trusted quality and support from Microchip Technology
23A512-E/ST Applications
- Industrial Control Systems: Serves as additional high-speed memory for temporary data logging and inter-processor communication.
- Consumer Electronics: Improves the responsiveness of multimedia devices by offering quick access to buffer memory.
- Automotive Electronics: Provides reliable data storage for advanced driver-assistance systems (ADAS) that require fast data retrieval.
- Internet of Things (IoT) Devices: Enables efficient data caching for seamless user experiences in smart home applications.
- Wearable Technology: Supports the compact size and low power requirements of modern wearable devices with its efficient design.
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