12A02MH-TL-E
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- Mfr.Part #
- 12A02MH-TL-E
- Manufacturer
- onsemi
- Package / Case
- 3-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS PNP 12V 1A 3MCPH
- Stock
- 16,242
- In Stock ：
- 16,242
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- JESD-609 Code :
- e6
- Collector Emitter Saturation Voltage :
- -240mV
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Width :
- 1.6mm
- Max Collector Current :
- 1A
- Lead Free :
- Lead Free
- Published :
- 2011
- Collector Base Voltage (VCBO) :
- 15V
- Mounting Type :
- Surface Mount
- Package / Case :
- 3-SMD, Flat Lead
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Height :
- 850μm
- Power Dissipation :
- 600mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Length :
- 2mm
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 12V
- Collector Emitter Breakdown Voltage :
- 12V
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Max Power Dissipation :
- 600mW
- Vce Saturation (Max) @ Ib, Ic :
- 240mV @ 20mA, 400mA
- Frequency :
- 450MHz
- Factory Lead Time :
- 21 Weeks
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Collector Emitter Voltage (VCEO) :
- 12V
- Datasheets
- 12A02MH-TL-E
PNP 150°C TJ 100nA ICBO 1 Elements 3-SMD, Flat Lead Tape & Reel (TR) Surface Mount
12A02MH-TL-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 10mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -240mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 240mV @ 20mA, 400mA.The emitter base voltage can be kept at 5V for high efficiency.The breakdown input voltage is 12V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
12A02MH-TL-E Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 240mV @ 20mA, 400mA
the emitter base voltage is kept at 5V
12A02MH-TL-E Applications
There are a lot of ON Semiconductor
12A02MH-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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