12A02CH-TL-E
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- Mfr.Part #
- 12A02CH-TL-E
- Manufacturer
- onsemi
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS PNP 12V 1A 3CPH
- Stock
- 2,062
- In Stock ：
- 2,062
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 450MHz
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Number of Pins :
- 3
- JESD-609 Code :
- e6
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Package / Case :
- SC-96
- Height :
- 900μm
- Factory Lead Time :
- 2 Weeks
- Width :
- 1.6mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 240mV @ 20mA, 400mA
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 700mW
- Collector Emitter Breakdown Voltage :
- 12V
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Published :
- 2011
- Transition Frequency :
- 450MHz
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 12V
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 15V
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Length :
- 2.9mm
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- -120mV
- Frequency :
- 450MHz
- Surface Mount :
- yes
- Max Collector Current :
- 1A
- Power Dissipation :
- 700mW
- Datasheets
- 12A02CH-TL-E
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-96 Tape & Reel (TR) Surface Mount
12A02CH-TL-E Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -120mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 240mV @ 20mA, 400mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 450MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
12A02CH-TL-E Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 240mV @ 20mA, 400mA
the emitter base voltage is kept at 5V
a transition frequency of 450MHz
12A02CH-TL-E Applications
There are a lot of ON Semiconductor
12A02CH-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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