06N06L

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Supplier Device Package :

SOT-23-3L

Power Dissipation-Max (Ta=25°C) :

1.8W

Gate Charge (Qg) (Max) @ Vgs :

2.4 nC @ 10 V

Drain to Source Voltage (Vdss) :

60V

Continuous Drain Current (Id) @ 25°C :

5.5A

Product Status :

Active

Input Capacitance (Ciss) (Max) @ Vds :

765 pF @ 30 V

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Technology :

MOSFET (Metal Oxide)

Package / Case :

SOT-23-3L

Operating Temperature :

-55°C ~ 150°C (TJ)

Packaging :

Tape and Reel (TR)

Power Dissipation (Max) :

960mW

FET Type :

N Channel

Rds On (Max) @ Id, Vgs :

60mΩ @ 3A,10V

Current - Continuous Drain (Id) @ 25°C :

5.5A

Vgs(th) (Max) @ Id :

2.5V @ 250uA

Series :

-

Vgs (Max) :

±20V

RoHS Status :

RoHS Compliant