ZXMP6A13FQTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

900mA Ta

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

0.9A

Power Dissipation-Max :

625mW Ta

Published :

2012

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Power Dissipation :

806mW

Additional Feature :

High Reliability

Drain-source On Resistance-Max :

0.4Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

60V

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

JESD-609 Code :

e3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Application :

SWITCHING

Factory Lead Time :

15 Weeks

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 4.5V

Number of Terminations :

3

Continuous Drain Current (ID) :

900mA

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

219pF @ 30V

Number of Pins :

3

ECCN Code :

EAR99

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

400m Ω @ 900mA, 10V

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Dual

DS Breakdown Voltage-Min :

60V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1