ZVN1409ASTOA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

6.5pF @ 25V

Terminal Form :

Wire

Number of Elements :

1

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

10mA Ta

Element Configuration :

Single

JESD-30 Code :

R-PSIP-W3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

625mW Ta

Weight :

453.59237mg

Vgs (Max) :

±20V

Voltage - Rated DC :

90V

Reach Compliance Code :

Unknown

ECCN Code :

EAR99

Number of Channels :

1

Continuous Drain Current (ID) :

10mA

Operating Temperature :

-55°C~150°C TJ

Current Rating :

10mA

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.4V @ 100μA

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

500 ps

Published :

2012

Number of Terminations :

3

Turn-Off Delay Time :

350 ps

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Package / Case :

E-Line-3

FET Type :

N-Channel

Turn On Delay Time :

300 ps

Rise Time :

500ps

Drain to Source Breakdown Voltage :

90V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Pin Count :

3

Power Dissipation :

625mW

Packaging :

Tape and Reel (TR)

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

250 Ω @ 5mA, 10V