ZVN1409ASTOA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSIP-W3

Element Configuration :

Single

Turn On Delay Time :

300 ps

Drain to Source Breakdown Voltage :

90V

Power Dissipation :

625mW

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

2.4V @ 100μA

Current - Continuous Drain (Id) @ 25°C :

10mA Ta

Reach Compliance Code :

Unknown

Current Rating :

10mA

Rds On (Max) @ Id, Vgs :

250 Ω @ 5mA, 10V

Package / Case :

E-Line-3

Transistor Element Material :

SILICON

FET Type :

N-Channel

Number of Terminations :

3

Voltage - Rated DC :

90V

Lead Free :

Lead Free

Power Dissipation-Max :

625mW Ta

Continuous Drain Current (ID) :

10mA

Turn-Off Delay Time :

350 ps

Number of Channels :

1

Mount :

Through Hole

Fall Time (Typ) :

500 ps

Input Capacitance (Ciss) (Max) @ Vds :

6.5pF @ 25V

Number of Elements :

1

Qualification Status :

Not Qualified

Rise Time :

500ps

Terminal Form :

Wire

ECCN Code :

EAR99

Weight :

453.59237mg

Published :

2012

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant