ZTX758
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- Mfr.Part #
- ZTX758
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 400V 0.5A E-LINE
- Stock
- 12,963
- In Stock ：
- 12,963
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 1997
- Frequency :
- 50MHz
- Transistor Type :
- PNP
- Pin Count :
- 3
- Weight :
- 453.59237mg
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 1W
- Factory Lead Time :
- 30 Weeks
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 50MHz
- Operating Temperature :
- -55°C~200°C TJ
- Mounting Type :
- Through Hole
- Width :
- 2.41mm
- Collector Emitter Voltage (VCEO) :
- 400V
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 400V
- Length :
- 4.77mm
- Continuous Collector Current :
- -500mA
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 5V
- Height :
- 4.01mm
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 400V
- Package / Case :
- E-Line-3
- Number of Pins :
- 3
- Current Rating :
- -500mA
- Transition Frequency :
- 50MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Wire
- Max Collector Current :
- 500mA
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -400V
- Collector Emitter Saturation Voltage :
- -500mV
- Manufacturer Package Identifier :
- E-Line
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Power Dissipation :
- 1W
- Datasheets
- ZTX758
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PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole
ZTX758 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 100mA 5V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -500mA for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 50MHz.A maximum collector current of 500mA volts can be achieved.
ZTX758 Features
the DC current gain for this device is 50 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
ZTX758 Applications
There are a lot of Diodes Incorporated
ZTX758 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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