ZTX757
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- Mfr.Part #
- ZTX757
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A E-LINE
- Stock
- 1,350
- In Stock ：
- 1,350
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- -500mV
- Voltage - Rated DC :
- -300V
- Collector Base Voltage (VCBO) :
- 300V
- Max Collector Current :
- 500mA
- Power Dissipation :
- 1W
- Radiation Hardening :
- No
- Width :
- 2.41mm
- Weight :
- 453.59237mg
- Current Rating :
- -500mA
- Emitter Base Voltage (VEBO) :
- -5V
- Continuous Collector Current :
- -500mA
- Collector Emitter Breakdown Voltage :
- 300V
- Terminal Form :
- Wire
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~200°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 4.77mm
- Collector Emitter Voltage (VCEO) :
- 300V
- Gain Bandwidth Product :
- 30MHz
- Published :
- 2012
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Transition Frequency :
- 30MHz
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 5V
- Frequency :
- 30MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Package / Case :
- E-Line-3
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 1W
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Packaging :
- Bulk
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Pin Count :
- 3
- Base Part Number :
- ZTX757
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- Height :
- 4.01mm
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 15 Weeks
- Datasheets
- ZTX757
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PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole
ZTX757 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 100mA.Continuous collector voltages of -500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 30MHz.During maximum operation, collector current can be as low as 500mA volts.
ZTX757 Features
the DC current gain for this device is 50 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 30MHz
ZTX757 Applications
There are a lot of Diodes Incorporated
ZTX757 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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