YJQ4666B

Manufacturer :

YANGJIE

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Vgs (Max) :

±10V

Rds On (Max) @ Id, Vgs :

36.5mOhm @ 7A, 4.5V

Power Dissipation (Max) :

2.2W (Tc)

Supplier Device Package :

6-DFN (2x2)

Package / Case :

6-UDFN Exposed Pad

Series :

-

FET Feature :

-

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain to Source Voltage (Vdss) :

20 V

Gate Charge (Qg) (Max) @ Vgs :

40.1 nC @ 4.5 V

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Input Capacitance (Ciss) (Max) @ Vds :

852 pF @ 10 V

Technology :

MOSFET (Metal Oxide)

FET Type :

P-Channel

Operating Temperature :

-55°C ~ 150°C (TJ)

Current - Continuous Drain (Id) @ 25°C :

7A (Tc)

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V