WPH4003-1E

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Mfr.Part #
WPH4003-1E
Manufacturer
onsemi
Package / Case
TO-3P-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 1700V 2.5A TO3PF
Stock
45,094
In Stock :
45,094

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
Number of Pins :
3
Power Dissipation :
55W
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Gate to Source Voltage (Vgs) :
30V
FET Type :
N-Channel
Pin Count :
3
Current - Continuous Drain (Id) @ 25°C :
2.5A Tc
Transistor Element Material :
SILICON
Factory Lead Time :
20 Weeks
Drain to Source Breakdown Voltage :
1.7kV
Width :
5.5mm
REACH SVHC :
No SVHC
Turn-Off Delay Time :
200 ns
Fall Time (Typ) :
55 ns
Input Capacitance (Ciss) (Max) @ Vds :
850pF @ 30V
Drain to Source Voltage (Vdss) :
1700V
Rds On (Max) @ Id, Vgs :
10.5 Ω @ 1.5A, 10V
Terminal Finish :
Tin (Sn)
Length :
15.5mm
Height :
24.5mm
Published :
2007
Avalanche Energy Rating (Eas) :
49 mJ
Drain Current-Max (Abs) (ID) :
2.5A
Operating Temperature :
150°C TJ
Case Connection :
Isolated
Package / Case :
TO-3P-3 Full Pack
Pulsed Drain Current-Max (IDM) :
6A
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
not_compliant
Gate Charge (Qg) (Max) @ Vgs :
48nC @ 10V
Rise Time :
21ns
JESD-609 Code :
e3
ECCN Code :
EAR99
Continuous Drain Current (ID) :
3A
Vgs (Max) :
±30V
Packaging :
Tube
Surface Mount :
No
Threshold Voltage :
4V
Power Dissipation-Max :
3W Ta 55W Tc
Lead Free :
Lead Free
Turn On Delay Time :
19 ns
Element Configuration :
Single
Datasheets
WPH4003-1E
Introducing Transistors - FETs, MOSFETs - Single onsemi WPH4003-1E from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Operating Temperature:150°C TJ, Package / Case:TO-3P-3 Full Pack, WPH4003-1E pinout, WPH4003-1E datasheet PDF, WPH4003-1E amp .Beyond Transistors - FETs, MOSFETs - Single onsemi WPH4003-1E ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi WPH4003-1E


N-Channel Tube 10.5 Ω @ 1.5A, 10V ±30V 850pF @ 30V 48nC @ 10V 1700V TO-3P-3 Full Pack

WPH4003-1E Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 49 mJ.A device's maximum input capacitance is 850pF @ 30V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1.7kV, and this device has a drain-to-source breakdown voltage of 1.7kV voltage.Its drain current is 2.5A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 200 ns.Its maximum pulsed drain current is 6A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 19 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.To operate this transistor, you need to apply a 1700V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

WPH4003-1E Features


the avalanche energy rating (Eas) is 49 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 1.7kV voltage
the turn-off delay time is 200 ns
based on its rated peak drain current 6A.
a threshold voltage of 4V
a 1700V drain to source voltage (Vdss)


WPH4003-1E Applications


There are a lot of ON Semiconductor
WPH4003-1E applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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