W971GG8JB25I

Manufacturer :

Winbond Electronics Corporation

Product Category :

Memory

Nominal Supply Current :

110mA

Sequential Burst Length :

48

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Clock Frequency :

200MHz

Memory Interface :

Parallel

Organization :

128MX16

Operating Mode :

SYNCHRONOUS

Length :

12.5mm

Operating Temperature :

-40°C~95°C TC

Mounting Type :

Surface Mount

Packaging :

Tray

Density :

1 Gb

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Terminal Pitch :

0.8mm

Number of Pins :

60

Height Seated (Max) :

1.2mm

I/O Type :

COMMON

Terminal Position :

BOTTOM

Number of Functions :

1

Max Frequency :

800MHz

Supply Voltage :

1.8V

Package / Case :

60-TFBGA

Memory Width :

16

Supply Voltage-Max (Vsup) :

1.9V

Memory Format :

DRAM

ECCN Code :

EAR99

Output Characteristics :

3-STATE

RoHS Status :

ROHS3 Compliant

Address Bus Width :

17b

Memory Size :

1Gb 128M x 8

Published :

2013

HTS Code :

8542.32.00.36

Operating Supply Voltage :

1.8V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Ports :

1

Write Cycle Time - Word, Page :

15ns

Supply Voltage-Min (Vsup) :

1.7V

Voltage - Supply :

1.7V~1.9V

Number of Terminations :

60

Refresh Cycles :

8192

Pin Count :

60

Access Time :

400ps

Memory Type :

Volatile

Interleaved Burst Length :

48

Additional Feature :

AUTO/SELF REFRESH