VP3203N3-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Product Category :

MOSFET

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Number of Elements :

1

Maximum Operating Temperature :

+ 150 C

Terminal Form :

THROUGH-HOLE

Published :

2013

Gate-Source Voltage (Max) :

±20(V)

Width :

4.19mm

Reach Compliance Code :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

RoHS :

Details

Number of Pins :

3

Power Dissipation-Max (Abs) :

0.74 W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

25 ns

Vgs(th) (Max) @ Id :

3.5V @ 10mA

JEDEC-95 Code :

TO-92

Configuration :

Single

Transistor Type :

1 P-Channel

FET Feature :

--

Transistor Polarity :

P-Channel

Number of Terminations :

3

Weight :

453.59237mg

Mounting Type :

Through Hole

ECCN Code :

EAR99

Surface Mount :

No

Mounting :

Through Hole

Packaging :

Bulk

Rad Hardened :

No

Additional Feature :

HIGH INPUT IMPEDANCE

Drain Current-Max (Abs) (ID) :

0.65A

Mount :

Through Hole

Mounting Style :

Through Hole

DS Breakdown Voltage-Min :

30 V

Power Dissipation Ambient-Max :

0.74 W

Product :

MOSFET Small Signal

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Channel Type :

P

Vgs (Max) :

±20V

Length :

5.21mm

Product Type :

MOSFET

Base Product Number :

VP3203

Number of Terminals :

3

Feedback Cap-Max (Crss) :

60 pF

Package :

Bag

Power Dissipation-Max :

740mW Ta

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Continuous Drain Current Id :

650

Operating Temp Range :

-55C to 150C

Turn On Delay Time :

10 ns

Terminal Finish :

Matte Tin (Sn) - annealed

Supplier Device Package :

TO-92-3

HTS Code :

8541.21.00.95

Peak Reflow Temperature (Cel) :

Not Applicable

Product Status :

Active

Drain to Source Voltage (Vdss) :

30V

Drain to Source Breakdown Voltage :

-30V

Continuous Drain Current (ID) :

650mA

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Package Shape :

Round

Polarity :

P

Operating Temperature Classification :

Military

JESD-30 Code :

O-PBCY-T3

Continuous Drain Current :

0.65(A)

Factory Lead Time :

14 Weeks

Drain-source On Resistance-Max :

0.6Ohm

Rds On (Max) @ Id, Vgs :

600m Ω @ 3A, 10V

Power Dissipation (Max) :

740mW (Ta)

Element Configuration :

Single

Pin Count :

3

Fall Time (Typ) :

15 ns

Channel Mode :

Enhancement

Qualification Status :

Not Qualified

MSL :

-

Terminal Position :

BOTTOM

Series :

--

Polarity/Channel Type :

P-Channel

Number of Channels :

1

Radiation Hardening :

No

Rise Time :

15ns

Manufacturer :

Microchip

Qualification :

-

FET Type :

P-Channel

Brand :

Microchip Technology / Atmel

Current - Continuous Drain (Id) @ 25°C :

650mA Tj

Power Dissipation :

740mW

Drain-Source On-Volt :

30(V)

Type :

Power MOSFET

Package Type :

TO-92

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Minimum Operating Temperature :

- 55 C

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Height :

5.33mm