VP2450N3-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Type :

1 P-Channel

Terminal Form :

Wire

Brand :

Microchip Technology / Atmel

Packaging :

Bulk

Min Operating Temperature :

-55 °C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

25ns

Published :

2007

Width :

4.19mm

Length :

5.21mm

Gate-Source Voltage (Max) :

±20(V)

Product Type :

MOSFET

Turn-Off Delay Time :

45 ns

Number of Terminations :

3

Channel Type :

P

Reach Compliance Code :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 25V

Radiation Hardening :

No

Max Operating Temperature :

150 °C

Continuous Drain Current :

0.1(A)

Power Dissipation-Max :

740mW Ta

Fall Time (Typ) :

25 ns

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Product Status :

Active

FET Type :

P-Channel

Max Power Dissipation :

740 mW

Terminal Finish :

Matte Tin (Sn)

Qualification Status :

Not Qualified

Transistor Polarity :

P-Channel

Channel Mode :

Enhancement

JEDEC-95 Code :

TO-92

Input Capacitance :

190 pF

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

Not Applicable

FET Feature :

--

Continuous Drain Current Id :

100

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Element Configuration :

Single

ECCN Code :

EAR99

Turn-On Delay Time :

10 ns

Continuous Drain Current (ID) :

100mA

Supplier Device Package :

TO-92-3

Lifecycle Status :

Production (Last Updated: 2 years ago)

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

100mA Tj

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

O-PBCY-W3

Polarity :

P

Vgs (Max) :

±20V

RoHS :

Details

Number of Elements :

1

Configuration :

Single

Base Product Number :

VP2450

Schedule B :

8541290080

Drain-source On Resistance-Max :

30 Ω

DS Breakdown Voltage-Min :

500 V

Rad Hardened :

No

Terminal Position :

BOTTOM

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

500V

Drain to Source Resistance :

30 Ω

Product Category :

MOSFET

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

30 Ω @ 100mA, 10V

Series :

--

Subcategory :

MOSFETs

Weight :

453.59237mg

Feedback Cap-Max (Crss) :

20 pF

Number of Channels :

1

Mount :

Through Hole

Mounting Type :

Through Hole

Polarity/Channel Type :

P-Channel

Mounting :

Through Hole

Factory Lead Time :

6 Weeks

Height :

5.33mm

Turn On Delay Time :

10 ns

Power Dissipation :

1W

Drain to Source Breakdown Voltage :

-500V

Package :

Bag

Manufacturer :

Microchip

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package Shape :

Round

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Power Dissipation (Max) :

740mW (Ta)

Maximum Operating Temperature :

+ 150 C

Mounting Style :

Through Hole

Minimum Operating Temperature :

- 55 C

Operating Temperature Classification :

Military

Operating Temp Range :

-55C to 150C

Drain-Source On-Volt :

500(V)

Package Type :

TO-92

Number of Terminals :

3

Operating Temperature :

-55°C~150°C TJ

Rds On Max :

30 Ω

Type :

Power MOSFET

Surface Mount :

No