VP2206N2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

0.75A

Configuration :

Single

Element Configuration :

Single

Mounting Type :

Through Hole

Operating Temp Range :

-55C to 150C

Operating Mode :

ENHANCEMENT MODE

Package Shape :

Round

Fall Time (Typ) :

22 ns

Base Product Number :

VP2206

Channel Type :

P

DS Breakdown Voltage-Min :

60 V

Current - Continuous Drain (Id) @ 25°C :

750mA Tj

Vgs(th) (Max) @ Id :

3.5V @ 10mA

Mounting :

Through Hole

Continuous Drain Current :

0.75(A)

Polarity/Channel Type :

P-Channel

Power Dissipation :

6W

Pin Count :

3

Drain to Source Voltage (Vdss) :

60V

Turn-Off Delay Time :

16 ns

Product Status :

Active

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Maximum Operating Temperature :

+ 150 C

Transistor Element Material :

SILICON

Height :

6.6mm

JESD-30 Code :

O-MBCY-W3

Reach Compliance Code :

Compliant

Width :

9.4mm

Number of Channels :

1

Drain-Source On-Volt :

60(V)

Continuous Drain Current Id :

750

Turn On Delay Time :

4 ns

Transistor Application :

SWITCHING

Additional Feature :

HIGH INPUT IMPEDANCE

Feedback Cap-Max (Crss) :

40 pF

Operating Temperature Classification :

Military

Mount :

Through Hole

Continuous Drain Current (ID) :

750mA

Drain to Source Breakdown Voltage :

-60V

Product Category :

MOSFET

Terminal Form :

Wire

Number of Terminals :

3

Factory Lead Time :

6 Weeks

Drain-source On Resistance-Max :

0.9Ohm

Terminal Finish :

NICKEL GOLD

Gate-Source Voltage (Max) :

±20(V)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Manufacturer :

Microchip

Radiation Hardening :

No

Surface Mount :

No

FET Type :

P-Channel

Package / Case :

TO-205AD, TO-39-3 Metal Can

Power Dissipation-Max :

360mW Tc

JESD-609 Code :

e4

Channel Mode :

Enhancement

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

3

Rad Hardened :

No

Minimum Operating Temperature :

- 55 C

Polarity :

P

Length :

9.4mm

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

6 W

Transistor Type :

1 P-Channel

Package :

Bag

Gate to Source Voltage (Vgs) :

20V

Package Type :

TO-39

JEDEC-95 Code :

TO-39

Terminal Position :

BOTTOM

RoHS :

N

FET Feature :

-

Rise Time :

16ns

Vgs (Max) :

±20V

Product Type :

MOSFET

Mounting Style :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Packaging :

Bulk

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Number of Pins :

3

Power Dissipation (Max) :

360mW (Tc)

RoHS Status :

Non-RoHS Compliant

Transistor Polarity :

P-Channel

Supplier Device Package :

TO-39

Published :

1998

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

900m Ω @ 3.5A, 10V

Series :

-

Brand :

Microchip Technology

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Type :

Power MOSFET