VP0550N3-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

Microchip

Channel Type :

P

Power Dissipation (Max) :

1W (Tc)

JESD-609 Code :

e3

Width :

4.19mm

Drain-Source On-Volt :

500(V)

Factory Lead Time :

16 Weeks

Package :

Bag

Input Capacitance (Ciss) (Max) @ Vds :

70pF @ 25V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Mount :

Through Hole

Number of Terminals :

3

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

125 Ω @ 10mA, 10V

Number of Elements :

1

Channel Mode :

Enhancement

Turn-Off Delay Time :

10 ns

Current - Continuous Drain (Id) @ 25°C :

54mA Tj

Continuous Drain Current (ID) :

-54mA

Element Configuration :

Single

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

BOTTOM

Product Status :

Active

Mounting Type :

Through Hole

Packaging :

Bulk

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

FET Feature :

-

Configuration :

Single

Base Product Number :

VP0550

Supplier Device Package :

TO-92-3

Product Type :

MOSFET

ECCN Code :

EAR99

Continuous Drain Current Id :

54

Maximum Operating Temperature :

+ 150 C

Terminal Finish :

Matte Tin (Sn)

DS Breakdown Voltage-Min :

500 V

Continuous Drain Current :

0.054(A)

Gate-Source Voltage (Max) :

±20(V)

Brand :

Microchip Technology / Atmel

Drain to Source Breakdown Voltage :

-500V

Fall Time (Typ) :

5 ns

Operating Temp Range :

-55C to 150C

Operating Temperature :

-55°C~150°C TJ

Weight :

453.59237mg

Reach Compliance Code :

Compliant

Minimum Operating Temperature :

- 55 C

JESD-30 Code :

O-PBCY-T3

Peak Reflow Temperature (Cel) :

Not Applicable

Subcategory :

MOSFETs

Package Shape :

Round

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Power Dissipation :

1W

Drain-source On Resistance-Max :

125 Ω

Feedback Cap-Max (Crss) :

10 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting :

Through Hole

Terminal Form :

THROUGH-HOLE

Polarity/Channel Type :

P-Channel

Number of Pins :

3

JEDEC-95 Code :

TO-92

Qualification Status :

Not Qualified

Turn On Delay Time :

10 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2013

Package Type :

TO-92

RoHS :

Details

Height :

5.33mm

Product Category :

MOSFET

Type :

Power MOSFET

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Series :

-

Rad Hardened :

No

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Rise Time :

8ns

Mounting Style :

Through Hole

Transistor Application :

SWITCHING

Power Dissipation-Max :

1W Tc

Surface Mount :

No

FET Type :

P-Channel

Transistor Type :

1 P-Channel

Length :

5.21mm

Drain to Source Voltage (Vdss) :

500V

Operating Temperature Classification :

Military

RoHS Status :

ROHS3 Compliant

Polarity :

P

Transistor Polarity :

P-Channel

Contact Plating :

Tin

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

0.054A