VN4012L-G

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Mfr.Part #
VN4012L-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 400V 160MA TO92-3
Stock
5,368
In Stock :
5,368

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
400V
ECCN Code :
EAR99
Operating Temperature Classification :
Military
Drain-Source On-Volt :
400(V)
Turn-Off Delay Time :
65 ns
Terminal Position :
BOTTOM
Reach Compliance Code :
Compliant
Drive Voltage (Max Rds On,Min Rds On) :
4.5V
Mounting :
Through Hole
Vgs (Max) :
±20V
Fall Time (Typ) :
65 ns
Terminal Finish :
Matte Tin (Sn)
Supplier Device Package :
TO-92-3
Published :
2009
FET Feature :
--
Channel Type :
N
Transistor Type :
1 N-Channel
Product Status :
Active
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
Single
Manufacturer :
Microchip
Drain to Source Breakdown Voltage :
400V
Input Capacitance (Ciss) (Max) @ Vds :
110pF @ 25V
Rad Hardened :
No
Gate to Source Voltage (Vgs) :
20V
Qualification Status :
Not Qualified
Current - Continuous Drain (Id) @ 25°C :
160mA Tj
Width :
4.19mm
Polarity :
N
Continuous Drain Current (ID) :
160mA
Polarity/Channel Type :
N-Channel
Rds On (Max) @ Id, Vgs :
12 Ω @ 100mA, 4.5V
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
DS Breakdown Voltage-Min :
400 V
Maximum Operating Temperature :
+ 150 C
Continuous Drain Current Id :
160
Power Dissipation (Max) :
1W (Tc)
Transistor Polarity :
N-Channel
JESD-30 Code :
O-PBCY-W3
Power Dissipation-Max :
1W Tc
Radiation Hardening :
No
Feedback Cap-Max (Crss) :
10 pF
Weight :
453.59237mg
Power Dissipation :
1W
Power Dissipation-Max (Abs) :
1 W
Peak Reflow Temperature (Cel) :
Not Applicable
Surface Mount :
No
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Mode :
ENHANCEMENT MODE
Product Type :
MOSFET
Number of Pins :
3
Factory Lead Time :
5 Weeks
Type :
Power MOSFET
Number of Channels :
1
Transistor Application :
SWITCHING
Brand :
Microchip Technology
Drain-source On Resistance-Max :
30 Ω
Contact Plating :
Tin
Turn On Delay Time :
20 ns
Package Type :
TO-92
Series :
--
Operating Temp Range :
-55C to 150C
Mount :
Through Hole
JEDEC-95 Code :
TO-92
RoHS Status :
ROHS3 Compliant
Product Category :
MOSFET
Length :
5.21mm
Pin Count :
3
Additional Feature :
LOW THRESHOLD
Element Configuration :
Single
FET Type :
N-Channel
Base Product Number :
VN4012
Minimum Operating Temperature :
- 55 C
Terminal Form :
Wire
RoHS :
Details
Number of Elements :
1
Rise Time :
20ns
Channel Mode :
Enhancement
Package :
Bag
Number of Terminations :
3
Mounting Type :
Through Hole
Continuous Drain Current :
0.16(A)
Packaging :
Bulk
Mounting Style :
Through Hole
Number of Terminals :
3
Package Shape :
Round
Gate-Source Voltage (Max) :
±20(V)
JESD-609 Code :
e3
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
1.8V @ 1mA
Height :
5.33mm
Datasheets
VN4012L-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology VN4012L-G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Pins:3, Type:Power MOSFET, Number of Channels:1, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, VN4012L-G pinout, VN4012L-G datasheet PDF, VN4012L-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology VN4012L-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology VN4012L-G


N-Channel Bulk 12 Ω @ 100mA, 4.5V ±20V 110pF @ 25V 400V TO-226-3, TO-92-3 (TO-226AA)

VN4012L-G Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 110pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 160mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 400V, and this device has a drainage-to-source breakdown voltage of 400VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 65 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 400 V.For this transistor to work, a voltage 400V is required between drain and source (Vdss).Using drive voltage (4.5V), this device contributes to a reduction in overall power consumption.

VN4012L-G Features


a continuous drain current (ID) of 160mA
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 65 ns
a 400V drain to source voltage (Vdss)


VN4012L-G Applications


There are a lot of Microchip Technology
VN4012L-G applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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