VN2410LG
- Mfr.Part #
- VN2410LG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 240V 200MA TO92-3
- Stock
- 36,053
- In Stock :
- 36,053
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Transistor Type :
- 1 N-Channel
- Number of Channels :
- 1
- Pin Count :
- 3
- Rise Time :
- 8ns
- Contact Plating :
- Tin
- Continuous Drain Current (ID) :
- 190mA
- Mount :
- Through Hole
- Type :
- FET
- Configuration :
- Single
- Supplier Device Package :
- TO-92-3
- Additional Feature :
- HIGH INPUT IMPEDANCE
- Series :
- --
- JESD-609 Code :
- e3
- JESD-30 Code :
- O-PBCY-T3
- Fall Time (Typ) :
- 24 ns
- Continuous Drain Current Id :
- 190
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 23 ns
- Number of Elements per Chip :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Product Type :
- MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 8 ns
- Drain-source On Resistance-Max :
- 10 Ω
- Surface Mount :
- No
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Feature :
- --
- Number of Pins :
- 3
- Package Type :
- TO-92
- Polarity/Channel Type :
- N-Channel
- Length :
- 5.21mm
- Reach Compliance Code :
- Compliant
- Mounting Type :
- Through Hole
- Minimum Operating Temperature :
- -55 °C
- Current :
- 2A
- Width :
- 4.19mm
- Brand :
- Microchip Technology / Atmel
- Number of Terminals :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- MSL :
- -
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Subcategory :
- MOSFETs
- Transistor Element Material :
- SILICON
- Package :
- Bag
- Terminal Form :
- THROUGH-HOLE
- Product Status :
- Active
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 240 V
- Weight :
- 453.59237mg
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 25V
- Channel Mode :
- Enhancement
- JEDEC-95 Code :
- TO-92
- Published :
- 2005
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Number of Terminations :
- 3
- Height :
- 5.334mm
- Element Configuration :
- Single
- Power Dissipation :
- 1W
- RoHS Status :
- ROHS3 Compliant
- Manufacturer :
- Microchip
- Mounting Style :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 10 Ω @ 500mA, 10V
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Position :
- BOTTOM
- Power Dissipation-Max :
- 1W Tc
- Maximum Operating Temperature :
- +150 °C
- Packaging :
- Bulk
- Voltage :
- 240V
- Channel Type :
- N
- FET Type :
- N-Channel
- Package Shape :
- Round
- Feedback Cap-Max (Crss) :
- 20 pF
- Qualification Status :
- Not Qualified
- Transistor Polarity :
- N-Channel
- Product Category :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 190mA Tj
- RoHS :
- Details
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 10V
- Factory Lead Time :
- 6 Weeks
- Base Product Number :
- VN2410
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 240V
- Qualification :
- -
- Drain to Source Voltage (Vdss) :
- 240V
- Power Dissipation (Max) :
- 1W (Tc)
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Datasheets
- VN2410LG
,TO-226_straightlead.jpg)
N-Channel Bulk 10 Ω @ 500mA, 10V ±20V 125pF @ 25V 240V TO-226-3, TO-92-3 (TO-226AA)
VN2410L-G Overview
A device's maximum input capacitance is 125pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 190mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=240V, and this device has a drain-to-source breakdown voltage of 240V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 23 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 240 V.To operate this transistor, you need to apply a 240V drain to source voltage (Vdss).This device uses no drive voltage (2.5V 10V) to reduce its overall power consumption.
VN2410L-G Features
a continuous drain current (ID) of 190mA
a drain-to-source breakdown voltage of 240V voltage
the turn-off delay time is 23 ns
a 240V drain to source voltage (Vdss)
VN2410L-G Applications
There are a lot of Microchip Technology
VN2410L-G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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