VN1206L-G
- Mfr.Part #
- VN1206L-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 120V 230MA TO92-3
- Stock
- 1,306
- In Stock :
- 1,306
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Turn On Delay Time :
- 8 ns
- Product Category :
- MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- -
- Operating Temperature Classification :
- Military
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Maximum Operating Temperature :
- + 150 C
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- FET Type :
- N-Channel
- Continuous Drain Current Id :
- 230
- Product Status :
- Active
- Polarity/Channel Type :
- N-Channel
- JESD-30 Code :
- O-PBCY-T3
- Mounting Style :
- Through Hole
- Turn-Off Delay Time :
- 18 ns
- Number of Elements :
- 1
- Published :
- 2013
- Mounting :
- Through Hole
- Drain to Source Breakdown Voltage :
- 120V
- Number of Channels :
- 1
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Drain to Source Voltage (Vdss) :
- 120 V
- Transistor Polarity :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Channel Mode :
- Enhancement
- Configuration :
- Single
- FET Feature :
- -
- Supplier Device Package :
- TO-92-3
- Transistor Element Material :
- SILICON
- Rad Hardened :
- No
- Feedback Cap-Max (Crss) :
- 20 pF
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 10V
- Number of Terminals :
- 3
- Fall Time (Typ) :
- 12 ns
- Terminal Form :
- THROUGH-HOLE
- JESD-609 Code :
- e3
- Operating Temp Range :
- -55C to 150C
- Minimum Operating Temperature :
- - 55 C
- Transistor Type :
- 1 N-Channel
- Qualification Status :
- Not Qualified
- Package Type :
- TO-92
- Gate-Source Voltage (Max) :
- ±30(V)
- Rise Time :
- 8ns
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 1W Tc
- Peak Reflow Temperature (Cel) :
- Not Applicable
- JEDEC-95 Code :
- TO-92
- Height :
- 5.33mm
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 500mA, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 25V
- Length :
- 5.21mm
- Power Dissipation :
- 1W
- Packaging :
- Bulk
- Vgs (Max) :
- ±30V
- Factory Lead Time :
- 6 Weeks
- Continuous Drain Current :
- 0.23(A)
- Continuous Drain Current (ID) :
- 230mA
- Drain-source On Resistance-Max :
- 6Ohm
- Number of Pins :
- 3
- Qualification :
- -
- Transistor Application :
- SWITCHING
- Subcategory :
- MOSFETs
- DS Breakdown Voltage-Min :
- 120 V
- Product Type :
- MOSFET
- Additional Feature :
- LOW THRESHOLD
- Brand :
- Microchip Technology / Atmel
- Surface Mount :
- No
- Power Dissipation (Max) :
- 1W (Tc)
- Drain-Source On-Volt :
- 120(V)
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Reach Compliance Code :
- Compliant
- Manufacturer :
- Microchip
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Width :
- 4.19mm
- Channel Type :
- N Channel
- Terminal Finish :
- Matte Tin (Sn)
- Polarity :
- N
- Package :
- Bag
- Weight :
- 453.59237mg
- Base Product Number :
- VN1206
- RoHS :
- Details
- Type :
- Power MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 230mA Tj
- Mounting Type :
- Through Hole
- Package Shape :
- Round
- Datasheets
- VN1206L-G
,TO-226_straightlead.jpg)
N-Channel Bulk 6 Ω @ 500mA, 10V ±30V 125pF @ 25V 120 V TO-226-3, TO-92-3 (TO-226AA)
VN1206L-G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 125pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 230mA amps.In this device, the drain-source breakdown voltage is 120V and VGS=120V, so the drain-source breakdown voltage is 120V in this case.It is [18 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 120 V to maintain normal operation.To operate this transistor, you will need a 120 V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.5V 10V).
VN1206L-G Features
a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 120V voltage
the turn-off delay time is 18 ns
a 120 V drain to source voltage (Vdss)
VN1206L-G Applications
There are a lot of Microchip Technology
VN1206L-G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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