VN0550N3-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Supplier Device Package :

TO-92-3

Gate-Source Voltage (Max) :

±20(V)

Length :

5.21mm

JESD-30 Code :

O-PBCY-W3

Terminal Position :

BOTTOM

Element Configuration :

Single

Fall Time (Typ) :

10 ns

Current - Continuous Drain (Id) @ 25°C :

50mA Tj

Continuous Drain Current (ID) :

50mA

Continuous Drain Current Id :

50

Type :

Power MOSFET

Package :

Bag

Vgs(th) (Max) @ Id :

4V @ 1mA

Transistor Element Material :

SILICON

Additional Feature :

LOW THRESHOLD

Configuration :

Single

Peak Reflow Temperature (Cel) :

Not Applicable

Drain-Source On-Volt :

500(V)

Transistor Application :

SWITCHING

Number of Terminals :

3

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

60 Ω

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Channel Type :

N

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Number of Pins :

3

Power Dissipation (Max) :

1W (Tc)

Operating Temp Range :

-55C to 150C

Channel Mode :

Enhancement

Polarity :

N

Qualification Status :

Not Qualified

Radiation Hardening :

No

Terminal Form :

Wire

RoHS :

Details

Maximum Operating Temperature :

+ 150 C

Operating Temperature :

-55°C~150°C TJ

Manufacturer :

Microchip

Reach Compliance Code :

Compliant

Mount :

Through Hole

Transistor Polarity :

N-Channel

Minimum Operating Temperature :

- 55 C

Input Capacitance (Ciss) (Max) @ Vds :

55pF @ 25V

Rds On (Max) @ Id, Vgs :

60 Ω @ 50mA, 10V

Width :

4.19mm

Series :

--

Brand :

Microchip Technology

Power Dissipation :

1W

Package Shape :

Round

Polarity/Channel Type :

N-Channel

Package Type :

TO-92

Transistor Type :

1 N-Channel

Turn-Off Delay Time :

10 ns

Product Status :

Active

Drain Current-Max (Abs) (ID) :

0.05A

Drain to Source Voltage (Vdss) :

500V

Mounting Style :

Through Hole

Terminal Finish :

Matte Tin (Sn)

Subcategory :

MOSFETs

Number of Terminations :

3

Number of Channels :

1

Weight :

453.59237mg

Power Dissipation-Max :

1W Tc

Mounting :

Through Hole

Operating Temperature Classification :

Military

DS Breakdown Voltage-Min :

500 V

Drain to Source Breakdown Voltage :

500V

JEDEC-95 Code :

TO-92

Product Category :

MOSFET

Rad Hardened :

No

Factory Lead Time :

5 Weeks

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

FET Type :

N-Channel

Height :

5.33mm

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Packaging :

Bulk

Base Product Number :

VN0550

Published :

2013

Product Type :

MOSFET

Rise Time :

15ns

Pin Count :

3

Feedback Cap-Max (Crss) :

5 pF

ECCN Code :

EAR99

JESD-609 Code :

e3

Continuous Drain Current :

0.05(A)

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

10 ns

FET Feature :

--