VN0300L-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Bulk

Minimum Operating Temperature :

-55 °C

Operating Mode :

ENHANCEMENT MODE

Type :

FET

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 20V

Product Status :

Active

Supplier Device Package :

TO-92-3

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Vgs (Max) :

±30V

Reach Compliance Code :

Compliant

FET Feature :

-

Gate to Source Voltage (Vgs) :

30V

JEDEC-95 Code :

TO-92

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

1.2 Ω

Transistor Polarity :

N-Channel

Polarity/Channel Type :

N-Channel

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 1A, 10V

Transistor Application :

SWITCHING

Package :

Bag

Drain Current-Max (Abs) (ID) :

0.64A

Series :

VN0300

Base Product Number :

VN0300

Additional Feature :

LOW THRESHOLD

Channel Type :

N

Weight :

453.59237mg

Height :

5.33mm

JESD-30 Code :

O-PBCY-T3

Maximum Operating Temperature :

+150 °C

Number of Terminals :

3

Current - Continuous Drain (Id) @ 25°C :

640mA Tj

Qualification Status :

Not Qualified

RoHS :

Details

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Manufacturer :

Microchip

Drain to Source Voltage (Vdss) :

30 V

Drain to Source Breakdown Voltage :

30V

Number of Elements per Chip :

1

MSL :

MSL 1 - Unlimited

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

1W

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Peak Reflow Temperature (Cel) :

Not Applicable

Feedback Cap-Max (Crss) :

50 pF

Published :

2013

Brand :

Microchip Technology / Atmel

Package Shape :

Round

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

30 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Power Dissipation (Max) :

1W (Tc)

Transistor Element Material :

SILICON

Package Type :

TO-92

Product Type :

MOSFET

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Mounting Style :

Through Hole

Terminal Form :

THROUGH-HOLE

Power Dissipation-Max :

1W Tc

Number of Elements :

1

Subcategory :

MOSFETs

Factory Lead Time :

6 Weeks

FET Type :

N-Channel

Surface Mount :

No

Product Category :

MOSFET

Length :

5.21mm

Continuous Drain Current (ID) :

640mA

Mounting Type :

Through Hole

Continuous Drain Current Id :

640

Radiation Hardening :

No

Configuration :

Single

Channel Mode :

Enhancement

Width :

4.19mm

Transistor Type :

1 N-Channel

Mount :

Through Hole

Qualification :

-

JESD-609 Code :

e3

Number of Pins :

3

Terminal Position :

BOTTOM

FET Technology :

METAL-OXIDE SEMICONDUCTOR