VN0106N3-G
- Mfr.Part #
- VN0106N3-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 350MA TO92-3
- Stock
- 1,868
- In Stock :
- 1,868
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 1W Tc
- Mounting Style :
- Through Hole
- Power Dissipation :
- 1W
- Drain to Source Voltage (Vdss) :
- 60V
- Drain-Source On-Volt :
- 60(V)
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 350mA
- Number of Channels :
- 1
- Product Category :
- MOSFET
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 6 Weeks
- Feedback Cap-Max (Crss) :
- 8 pF
- Qualification Status :
- Not Qualified
- Packaging :
- Bulk
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Gate-Source Voltage (Max) :
- ±20(V)
- Fall Time (Typ) :
- 5 ns
- JEDEC-95 Code :
- TO-92
- Weight :
- 453.59237mg
- Polarity/Channel Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 350mA Tj
- Number of Terminations :
- 3
- Number of Terminals :
- 3
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Base Product Number :
- VN0106
- Type :
- Power MOSFET
- Surface Mount :
- No
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation (Max) :
- 1W (Tc)
- Package :
- Bag
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Transistor Type :
- 1 N-Channel
- FET Feature :
- --
- Channel Mode :
- Enhancement
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2013
- Length :
- 5.21mm
- Drain to Source Breakdown Voltage :
- 60V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- JESD-609 Code :
- e3
- Height :
- 5.33mm
- Product Status :
- Active
- Reach Compliance Code :
- Compliant
- Drain-source On Resistance-Max :
- 3Ohm
- Rad Hardened :
- No
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- O-PBCY-T3
- Manufacturer :
- Microchip
- FET Type :
- N-Channel
- Continuous Drain Current Id :
- 350
- Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn)
- Pin Count :
- 3
- DS Breakdown Voltage-Min :
- 60 V
- Product Type :
- MOSFET
- ECCN Code :
- EAR99
- Rise Time :
- 5ns
- Turn-Off Delay Time :
- 6 ns
- Terminal Form :
- THROUGH-HOLE
- Transistor Polarity :
- N-Channel
- Mount :
- Through Hole
- Series :
- --
- Operating Temperature Classification :
- Military
- Polarity :
- N
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Channel Type :
- N
- Input Capacitance (Ciss) (Max) @ Vds :
- 65pF @ 25V
- Continuous Drain Current :
- 0.35(A)
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Mounting :
- Through Hole
- Terminal Position :
- BOTTOM
- Gate to Source Voltage (Vgs) :
- 20V
- Supplier Device Package :
- TO-92-3
- Subcategory :
- MOSFETs
- Package Type :
- TO-92
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package Shape :
- Round
- Maximum Operating Temperature :
- + 150 C
- Number of Pins :
- 3
- MSL :
- -
- RoHS :
- Details
- Rds On (Max) @ Id, Vgs :
- 3 Ω @ 1A, 10V
- Brand :
- Microchip Technology / Atmel
- Turn On Delay Time :
- 3 ns
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Additional Feature :
- HIGH INPUT IMPEDANCE
- Width :
- 4.19mm
- Operating Temp Range :
- -55C to 150C
- Lead Free :
- Lead Free
- Qualification :
- -
- Datasheets
- VN0106N3-G
,TO-226_straightlead.jpg)
N-Channel Bulk 3 Ω @ 1A, 10V ±20V 65pF @ 25V 60V TO-226-3, TO-92-3 (TO-226AA)
VN0106N3-G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 65pF @ 25V.This device conducts a continuous drain current (ID) of 350mA, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 6 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 3 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 60 V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
VN0106N3-G Features
a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 6 ns
a 60V drain to source voltage (Vdss)
VN0106N3-G Applications
There are a lot of Microchip Technology
VN0106N3-G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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