VN0106N3-G

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Mfr.Part #
VN0106N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 60V 350MA TO92-3
Stock
1,868
In Stock :
1,868

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
1W Tc
Mounting Style :
Through Hole
Power Dissipation :
1W
Drain to Source Voltage (Vdss) :
60V
Drain-Source On-Volt :
60(V)
Number of Elements :
1
Continuous Drain Current (ID) :
350mA
Number of Channels :
1
Product Category :
MOSFET
Transistor Element Material :
SILICON
Factory Lead Time :
6 Weeks
Feedback Cap-Max (Crss) :
8 pF
Qualification Status :
Not Qualified
Packaging :
Bulk
Element Configuration :
Single
Transistor Application :
SWITCHING
Gate-Source Voltage (Max) :
±20(V)
Fall Time (Typ) :
5 ns
JEDEC-95 Code :
TO-92
Weight :
453.59237mg
Polarity/Channel Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
350mA Tj
Number of Terminations :
3
Number of Terminals :
3
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
Base Product Number :
VN0106
Type :
Power MOSFET
Surface Mount :
No
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Minimum Operating Temperature :
- 55 C
Power Dissipation (Max) :
1W (Tc)
Package :
Bag
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
Transistor Type :
1 N-Channel
FET Feature :
--
Channel Mode :
Enhancement
Operating Mode :
ENHANCEMENT MODE
Published :
2013
Length :
5.21mm
Drain to Source Breakdown Voltage :
60V
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
JESD-609 Code :
e3
Height :
5.33mm
Product Status :
Active
Reach Compliance Code :
Compliant
Drain-source On Resistance-Max :
3Ohm
Rad Hardened :
No
Vgs (Max) :
±20V
JESD-30 Code :
O-PBCY-T3
Manufacturer :
Microchip
FET Type :
N-Channel
Continuous Drain Current Id :
350
Configuration :
Single
Terminal Finish :
Matte Tin (Sn)
Pin Count :
3
DS Breakdown Voltage-Min :
60 V
Product Type :
MOSFET
ECCN Code :
EAR99
Rise Time :
5ns
Turn-Off Delay Time :
6 ns
Terminal Form :
THROUGH-HOLE
Transistor Polarity :
N-Channel
Mount :
Through Hole
Series :
--
Operating Temperature Classification :
Military
Polarity :
N
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Channel Type :
N
Input Capacitance (Ciss) (Max) @ Vds :
65pF @ 25V
Continuous Drain Current :
0.35(A)
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Mounting :
Through Hole
Terminal Position :
BOTTOM
Gate to Source Voltage (Vgs) :
20V
Supplier Device Package :
TO-92-3
Subcategory :
MOSFETs
Package Type :
TO-92
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package Shape :
Round
Maximum Operating Temperature :
+ 150 C
Number of Pins :
3
MSL :
-
RoHS :
Details
Rds On (Max) @ Id, Vgs :
3 Ω @ 1A, 10V
Brand :
Microchip Technology / Atmel
Turn On Delay Time :
3 ns
Peak Reflow Temperature (Cel) :
Not Applicable
Additional Feature :
HIGH INPUT IMPEDANCE
Width :
4.19mm
Operating Temp Range :
-55C to 150C
Lead Free :
Lead Free
Qualification :
-
Datasheets
VN0106N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology VN0106N3-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Number of Terminations:3, Type:Power MOSFET, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, VN0106N3-G pinout, VN0106N3-G datasheet PDF, VN0106N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology VN0106N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology VN0106N3-G


N-Channel Bulk 3 Ω @ 1A, 10V ±20V 65pF @ 25V 60V TO-226-3, TO-92-3 (TO-226AA)

VN0106N3-G Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 65pF @ 25V.This device conducts a continuous drain current (ID) of 350mA, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 6 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 3 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 60 V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).

VN0106N3-G Features


a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 6 ns
a 60V drain to source voltage (Vdss)


VN0106N3-G Applications


There are a lot of Microchip Technology
VN0106N3-G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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