VN0104N3-G
- Mfr.Part #
- VN0104N3-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 350MA TO92-3
- Stock
- 8,065
- In Stock :
- 8,065
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements per Chip :
- 1
- Width :
- 4.06mm
- Continuous Drain Current (ID) :
- 350mA
- Power Dissipation-Max (Abs) :
- 1 W
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-92
- Power Dissipation :
- 1W
- Drain-source On Resistance-Max :
- 3Ohm
- Maximum Operating Temperature :
- +150 °C
- Number of Channels :
- 1
- Power Dissipation-Max :
- 1W Tc
- Radiation Hardening :
- No
- Channel Type :
- N
- Package Shape :
- Round
- RoHS :
- Details
- Surface Mount :
- No
- Product Category :
- MOSFET
- Configuration :
- Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Temperature Classification :
- Military
- Mount :
- Through Hole
- Base Product Number :
- VN0104
- Continuous Drain Current Id :
- 350
- Rds On (Max) @ Id, Vgs :
- 3 Ω @ 1A, 10V
- Turn-Off Delay Time :
- 6 ns
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Gate-Source Voltage (Max) :
- ±20(V)
- ECCN Code :
- EAR99
- JESD-30 Code :
- O-PBCY-T3
- FET Type :
- N-Channel
- Rise Time :
- 5 ns
- Published :
- 2013
- MSL :
- -
- Drain-Source On-Volt :
- 40(V)
- Gate to Source Voltage (Vgs) :
- 20V
- Rad Hardened :
- No
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Type :
- Power MOSFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 3 ns
- Manufacturer :
- Microchip
- Vgs (Max) :
- ±20V
- Height :
- 5.33mm
- Minimum Operating Temperature :
- -55 °C
- Reach Compliance Code :
- Compliant
- Channel Mode :
- Enhancement
- Continuous Drain Current :
- 0.35(A)
- Number of Terminations :
- 3
- Power Dissipation (Max) :
- 1W (Tc)
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- Product Status :
- Active
- Terminal Finish :
- Matte Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Product Type :
- MOSFET
- Mounting :
- Through Hole
- Transistor Type :
- 1 N-Channel
- Element Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 0.5A
- Operating Temperature :
- -55°C~150°C TJ
- Package Type :
- TO-92
- Polarity/Channel Type :
- N-Channel
- Series :
- -
- JESD-609 Code :
- e3
- Package :
- Bag
- Drain to Source Breakdown Voltage :
- 40V
- Feedback Cap-Max (Crss) :
- 8 pF
- Current - Continuous Drain (Id) @ 25°C :
- 350mA Tj
- Terminal Form :
- THROUGH-HOLE
- Transistor Application :
- SWITCHING
- Transistor Polarity :
- N-Channel
- Number of Terminals :
- 3
- Mounting Type :
- Through Hole
- Operating Temp Range :
- -55C to 150C
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Supplier Device Package :
- TO-92-3
- Polarity :
- N
- DS Breakdown Voltage-Min :
- 40 V
- Drain to Source Voltage (Vdss) :
- 40 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 65pF @ 25V
- Qualification :
- -
- Brand :
- Microchip Technology / Atmel
- Factory Lead Time :
- 2 Weeks
- Additional Feature :
- HIGH INPUT IMPEDANCE
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Length :
- 5.08mm
- Weight :
- 219.992299mg
- FET Feature :
- -
- Terminal Position :
- BOTTOM
- Mounting Style :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Datasheets
- VN0104N3-G
,TO-226_straightlead.jpg)
N-Channel Bulk 3 Ω @ 1A, 10V ±20V 65pF @ 25V 40 V TO-226-3, TO-92-3 (TO-226AA)
VN0104N3-G Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 65pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 350mA.With a drain-source breakdown voltage of 40V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 40V.0.5A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 6 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 3 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 40 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 40 V.Using drive voltage (5V 10V) reduces this device's overall power consumption.
VN0104N3-G Features
a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 6 ns
a 40 V drain to source voltage (Vdss)
VN0104N3-G Applications
There are a lot of Microchip Technology
VN0104N3-G applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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