VN0104N3-G

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Mfr.Part #
VN0104N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 40V 350MA TO92-3
Stock
8,065
In Stock :
8,065

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
3
Power Dissipation (Max) :
1W (Tc)
JESD-30 Code :
O-PBCY-T3
Transistor Application :
SWITCHING
Mounting Type :
Through Hole
Vgs (Max) :
±20V
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current :
0.35(A)
Supplier Device Package :
TO-92-3
Package Shape :
Round
Surface Mount :
No
Package Type :
TO-92
Product Category :
MOSFET
Length :
5.08mm
Mount :
Through Hole
JESD-609 Code :
e3
Additional Feature :
HIGH INPUT IMPEDANCE
Type :
Power MOSFET
Height :
5.33mm
DS Breakdown Voltage-Min :
40 V
Number of Elements per Chip :
1
Drain-source On Resistance-Max :
3Ohm
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Maximum Operating Temperature :
+150 °C
Turn On Delay Time :
3 ns
Drain Current-Max (Abs) (ID) :
0.5A
Configuration :
Single
FET Feature :
-
Terminal Position :
BOTTOM
Power Dissipation-Max :
1W Tc
Drain to Source Voltage (Vdss) :
40 V
Terminal Finish :
Matte Tin (Sn)
Feedback Cap-Max (Crss) :
8 pF
Package :
Bag
Reach Compliance Code :
Compliant
Drain to Source Breakdown Voltage :
40V
Mounting Style :
Through Hole
Mounting :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
65pF @ 25V
Transistor Polarity :
N-Channel
Terminal Form :
THROUGH-HOLE
Product Type :
MOSFET
JEDEC-95 Code :
TO-92
Rise Time :
5 ns
Width :
4.06mm
Power Dissipation-Max (Abs) :
1 W
Gate to Source Voltage (Vgs) :
20V
Current - Continuous Drain (Id) @ 25°C :
350mA Tj
Channel Type :
N
Peak Reflow Temperature (Cel) :
Not Applicable
Continuous Drain Current Id :
350
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Elements :
1
Drain-Source On-Volt :
40(V)
MSL :
-
Base Product Number :
VN0104
Manufacturer :
Microchip
Operating Temp Range :
-55C to 150C
FET Type :
N-Channel
Number of Terminals :
3
Number of Terminations :
3
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
2 Weeks
Transistor Element Material :
SILICON
Minimum Operating Temperature :
-55 °C
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Turn-Off Delay Time :
6 ns
Transistor Type :
1 N-Channel
Operating Temperature :
-55°C~150°C TJ
Qualification Status :
Not Qualified
Rad Hardened :
No
Weight :
219.992299mg
ECCN Code :
EAR99
Operating Temperature Classification :
Military
Series :
-
Gate-Source Voltage (Max) :
±20(V)
Published :
2013
Brand :
Microchip Technology / Atmel
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Qualification :
-
Rds On (Max) @ Id, Vgs :
3 Ω @ 1A, 10V
Polarity :
N
Product Status :
Active
Polarity/Channel Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Packaging :
Bulk
Radiation Hardening :
No
Continuous Drain Current (ID) :
350mA
Power Dissipation :
1W
Element Configuration :
Single
Number of Channels :
1
RoHS :
Details
Channel Mode :
Enhancement
Datasheets
VN0104N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology VN0104N3-G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Type:Power MOSFET, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Channels:1, VN0104N3-G pinout, VN0104N3-G datasheet PDF, VN0104N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology VN0104N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology VN0104N3-G


N-Channel Bulk 3 Ω @ 1A, 10V ±20V 65pF @ 25V 40 V TO-226-3, TO-92-3 (TO-226AA)

VN0104N3-G Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 65pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 350mA.With a drain-source breakdown voltage of 40V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 40V.0.5A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 6 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 3 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 40 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 40 V.Using drive voltage (5V 10V) reduces this device's overall power consumption.

VN0104N3-G Features


a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 6 ns
a 40 V drain to source voltage (Vdss)


VN0104N3-G Applications


There are a lot of Microchip Technology
VN0104N3-G applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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