VN0104N3-G

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Mfr.Part #
VN0104N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 40V 350MA TO92-3
Stock
8,065
In Stock :
8,065

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements per Chip :
1
Width :
4.06mm
Continuous Drain Current (ID) :
350mA
Power Dissipation-Max (Abs) :
1 W
Number of Pins :
3
JEDEC-95 Code :
TO-92
Power Dissipation :
1W
Drain-source On Resistance-Max :
3Ohm
Maximum Operating Temperature :
+150 °C
Number of Channels :
1
Power Dissipation-Max :
1W Tc
Radiation Hardening :
No
Channel Type :
N
Package Shape :
Round
RoHS :
Details
Surface Mount :
No
Product Category :
MOSFET
Configuration :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Temperature Classification :
Military
Mount :
Through Hole
Base Product Number :
VN0104
Continuous Drain Current Id :
350
Rds On (Max) @ Id, Vgs :
3 Ω @ 1A, 10V
Turn-Off Delay Time :
6 ns
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Gate-Source Voltage (Max) :
±20(V)
ECCN Code :
EAR99
JESD-30 Code :
O-PBCY-T3
FET Type :
N-Channel
Rise Time :
5 ns
Published :
2013
MSL :
-
Drain-Source On-Volt :
40(V)
Gate to Source Voltage (Vgs) :
20V
Rad Hardened :
No
Peak Reflow Temperature (Cel) :
Not Applicable
Type :
Power MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn On Delay Time :
3 ns
Manufacturer :
Microchip
Vgs (Max) :
±20V
Height :
5.33mm
Minimum Operating Temperature :
-55 °C
Reach Compliance Code :
Compliant
Channel Mode :
Enhancement
Continuous Drain Current :
0.35(A)
Number of Terminations :
3
Power Dissipation (Max) :
1W (Tc)
Transistor Element Material :
SILICON
Packaging :
Bulk
Product Status :
Active
Terminal Finish :
Matte Tin (Sn)
Operating Mode :
ENHANCEMENT MODE
Pin Count :
3
Product Type :
MOSFET
Mounting :
Through Hole
Transistor Type :
1 N-Channel
Element Configuration :
Single
Drain Current-Max (Abs) (ID) :
0.5A
Operating Temperature :
-55°C~150°C TJ
Package Type :
TO-92
Polarity/Channel Type :
N-Channel
Series :
-
JESD-609 Code :
e3
Package :
Bag
Drain to Source Breakdown Voltage :
40V
Feedback Cap-Max (Crss) :
8 pF
Current - Continuous Drain (Id) @ 25°C :
350mA Tj
Terminal Form :
THROUGH-HOLE
Transistor Application :
SWITCHING
Transistor Polarity :
N-Channel
Number of Terminals :
3
Mounting Type :
Through Hole
Operating Temp Range :
-55C to 150C
Qualification Status :
Not Qualified
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Supplier Device Package :
TO-92-3
Polarity :
N
DS Breakdown Voltage-Min :
40 V
Drain to Source Voltage (Vdss) :
40 V
Input Capacitance (Ciss) (Max) @ Vds :
65pF @ 25V
Qualification :
-
Brand :
Microchip Technology / Atmel
Factory Lead Time :
2 Weeks
Additional Feature :
HIGH INPUT IMPEDANCE
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Length :
5.08mm
Weight :
219.992299mg
FET Feature :
-
Terminal Position :
BOTTOM
Mounting Style :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Datasheets
VN0104N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology VN0104N3-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Channels:1, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Type:Power MOSFET, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, VN0104N3-G pinout, VN0104N3-G datasheet PDF, VN0104N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology VN0104N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology VN0104N3-G


N-Channel Bulk 3 Ω @ 1A, 10V ±20V 65pF @ 25V 40 V TO-226-3, TO-92-3 (TO-226AA)

VN0104N3-G Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 65pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 350mA.With a drain-source breakdown voltage of 40V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 40V.0.5A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 6 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 3 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 40 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 40 V.Using drive voltage (5V 10V) reduces this device's overall power consumption.

VN0104N3-G Features


a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 6 ns
a 40 V drain to source voltage (Vdss)


VN0104N3-G Applications


There are a lot of Microchip Technology
VN0104N3-G applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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