VMO650-01F
- Mfr.Part #
- VMO650-01F
- Manufacturer
- Littelfuse
- Package / Case
- Y3-DCB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 690A Y3-DCB
- Stock
- 2
- In Stock :
- 2
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 690A
- Pbfree Code :
- yes
- Product Status :
- Active
- Vgs(th) (Max) @ Id :
- 6V @ 130mA
- Published :
- 2000
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Reach Compliance Code :
- Compliant
- Power Dissipation (Max) :
- 2500W (Tc)
- Turn-Off Delay Time :
- 800 ns
- Series :
- HiPerFET™
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 100 V
- Power Dissipation-Max (Abs) :
- 2500 W
- Drain-source On Resistance-Max :
- 0.0018Ohm
- Case Connection :
- Isolated
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -40°C~150°C TJ
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- UPPER
- Polarity/Channel Type :
- N-Channel
- Power Dissipation :
- 2.5kW
- Current - Continuous Drain (Id) @ 25°C :
- 690A Tc
- Rds On (Max) @ Id, Vgs :
- 1.8m Ω @ 500mA, 10V
- Terminal Form :
- UNSPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 2780A
- Packaging :
- Bulk
- Factory Lead Time :
- 28 Weeks
- RoHS Status :
- ROHS3 Compliant
- Manufacturer :
- Littelfuse Inc
- Number of Terminations :
- 4
- Power Dissipation-Max :
- 2500W Tc
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 2300nC @ 10V
- Fall Time (Typ) :
- 200 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 100V
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 690 A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- Y3-DCB
- Supplier Device Package :
- Y3-DCB
- Operating Mode :
- ENHANCEMENT MODE
- Package Shape :
- RECTANGULAR
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Feature :
- --
- Mount :
- Chassis Mount
- JESD-30 Code :
- R-PUFM-X4
- Base Part Number :
- VMO
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 59000pF @ 25V
- ECCN Code :
- EAR99
- Package :
- Bulk
- Surface Mount :
- No
- Lead Free :
- Lead Free
- Rise Time :
- 500ns
- Current Rating :
- 690A
- Number of Terminals :
- 4
- Drain to Source Breakdown Voltage :
- 100V
- Base Product Number :
- VMO650
- Mounting Type :
- Chassis Mount
- Drain to Source Voltage (Vdss) :
- 100V
- Number of Pins :
- 4
- Datasheets
- VMO650-01F
VMO650-01F Documents
N-Channel Bulk 1.8m Ω @ 500mA, 10V ±20V 59000pF @ 25V 2300nC @ 10V 100V Y3-DCB
VMO650-01F Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 59000pF @ 25V.This device conducts a continuous drain current (ID) of 690A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 690 A.When the device is turned off, a turn-off delay time of 800 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 2780A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 100 V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
VMO650-01F Features
a continuous drain current (ID) of 690A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 800 ns
based on its rated peak drain current 2780A.
a 100V drain to source voltage (Vdss)
VMO650-01F Applications
There are a lot of IXYS
VMO650-01F applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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