VMO1200-01F
- Mfr.Part #
- VMO1200-01F
- Manufacturer
- Littelfuse
- Package / Case
- Y3-Li
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 1220A Y3-LI
- Stock
- 105
- In Stock :
- 105
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Minimum Operating Temperature :
- - 40 C
- Rds On (Max) @ Id, Vgs :
- 1.35m Ω @ 932A, 10V
- Base Product Number :
- VMO1200
- Case Connection :
- Isolated
- Brand :
- IXYS
- DS Breakdown Voltage-Min :
- 100V
- JESD-30 Code :
- R-XUFM-X4
- Polarity/Channel Type :
- N-Channel
- Manufacturer :
- IXYS
- Published :
- 2010
- Surface Mount :
- No
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Package / Case :
- Y3-Li
- Drain Current-Max (Abs) (ID) :
- 1220A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 2520nC @ 10V
- Number of Terminations :
- 4
- FET Feature :
- --
- Drain to Source Voltage (Vdss) :
- 100V
- Pbfree Code :
- yes
- Packaging :
- Tray
- Product Category :
- Discrete Semiconductor Modules
- Operating Temperature :
- -40°C~150°C TJ
- Power Dissipation (Max) :
- --
- Terminal Form :
- UNSPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 1220A Tc
- Product Type :
- Discrete Semiconductor Modules
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Base Part Number :
- VMO
- Maximum Operating Temperature :
- + 150 C
- Drain-source On Resistance-Max :
- 0.00125Ohm
- Terminal Position :
- UPPER
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 1.245kA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Chassis Mount
- Type :
- Single Switch MOSFET Module
- Package Shape :
- RECTANGULAR
- Transistor Application :
- SWITCHING
- Product Status :
- Active
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Supplier Device Package :
- Y3-Li
- Reach Compliance Code :
- not_compliant
- ECCN Code :
- EAR99
- Mounting Type :
- Chassis Mount
- Package :
- Tray
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminals :
- 4
- RoHS :
- Details
- Number of Elements :
- 1
- Series :
- HiPerFET™
- Operating Mode :
- ENHANCEMENT MODE
- Product :
- Power MOSFET Modules
- Vgs(th) (Max) @ Id :
- 4V @ 64mA
- Pin Count :
- 4
- Mounting Style :
- Screw Mounts
- Transistor Element Material :
- SILICON
- Datasheets
- VMO1200-01F
VMO1200-01F Documents

N-Channel Tray 1.35m Ω @ 932A, 10V ±20V 2520nC @ 10V 100V Y3-Li
VMO1200-01F Description
The VMO1200-01F is a MOSFET N-CH 100V 1220A Y3-LI, N-Channel Enhancement Mode. The most typical method for creating the type of field-effect transistor (FET) known as a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is by carefully controlling the oxidation of silicon. The conductivity of the device is controlled by the voltage of an insulated gate. Electronic signals can be amplified or switched using this property of conductivity that changes with the amount of applied voltage. A MOSFET is generally always referred to as a metal-insulator-semiconductor field-effect transistor (MISFET). An insulated-gate field-effect transistor (IGFET) is another alternative term.
VMO1200-01F Features
-
Package
- low inductive current path
- screw connection to high current main terminals
- use of non interchangeable connectors for auxiliary terminals possible
- Kelvin source terminals for easy drive
- isolated DCB ceramic base plate
-
PolarHT™ MOSFET technology
- low RDSon
- dv/dt ruggedness
- fast intrinsic reverse diode
-
VDSS = 100V
-
ID25 = 1220A
-
RDS(on) = 1.25mΩ max
VMO1200-01F Applications
-
Converters with high power density for
- main and auxiliary AC drives of electric vehicles
- DC drives
- power supplies
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