VMO1200-01F
- Mfr.Part #
- VMO1200-01F
- Manufacturer
- Littelfuse
- Package / Case
- Y3-Li
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 1220A Y3-LI
- Stock
- 105
- In Stock :
- 105
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- Minimum Operating Temperature :
- - 40 C
- Polarity/Channel Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 100V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 2520nC @ 10V
- Drain Current-Max (Abs) (ID) :
- 1220A
- Brand :
- IXYS
- Drain to Source Voltage (Vdss) :
- 100V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mount :
- Chassis Mount
- Operating Temperature :
- -40°C~150°C TJ
- Reach Compliance Code :
- not_compliant
- Number of Elements :
- 1
- Product Type :
- Discrete Semiconductor Modules
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 1.245kA
- Current - Continuous Drain (Id) @ 25°C :
- 1220A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- Isolated
- Published :
- 2010
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Number of Terminals :
- 4
- ECCN Code :
- EAR99
- Base Product Number :
- VMO1200
- Mounting Type :
- Chassis Mount
- Maximum Operating Temperature :
- + 150 C
- Product :
- Power MOSFET Modules
- Terminal Form :
- UNSPECIFIED
- Surface Mount :
- No
- Package / Case :
- Y3-Li
- Rds On (Max) @ Id, Vgs :
- 1.35m Ω @ 932A, 10V
- Manufacturer :
- IXYS
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-XUFM-X4
- Package Shape :
- RECTANGULAR
- Product Category :
- Discrete Semiconductor Modules
- Power Dissipation (Max) :
- --
- Terminal Position :
- UPPER
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Style :
- Screw Mounts
- FET Feature :
- --
- Series :
- HiPerFET™
- RoHS :
- Details
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Part Number :
- VMO
- Lead Free :
- Lead Free
- Number of Terminations :
- 4
- Packaging :
- Tray
- Vgs (Max) :
- ±20V
- Package :
- Tray
- Type :
- Single Switch MOSFET Module
- Qualification Status :
- Not Qualified
- Drain-source On Resistance-Max :
- 0.00125Ohm
- Vgs(th) (Max) @ Id :
- 4V @ 64mA
- Supplier Device Package :
- Y3-Li
- Datasheets
- VMO1200-01F

N-Channel Tray 1.35m Ω @ 932A, 10V ±20V 2520nC @ 10V 100V Y3-Li
VMO1200-01F Description
The VMO1200-01F is a MOSFET N-CH 100V 1220A Y3-LI, N-Channel Enhancement Mode. The most typical method for creating the type of field-effect transistor (FET) known as a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is by carefully controlling the oxidation of silicon. The conductivity of the device is controlled by the voltage of an insulated gate. Electronic signals can be amplified or switched using this property of conductivity that changes with the amount of applied voltage. A MOSFET is generally always referred to as a metal-insulator-semiconductor field-effect transistor (MISFET). An insulated-gate field-effect transistor (IGFET) is another alternative term.
VMO1200-01F Features
-
Package
- low inductive current path
- screw connection to high current main terminals
- use of non interchangeable connectors for auxiliary terminals possible
- Kelvin source terminals for easy drive
- isolated DCB ceramic base plate
-
PolarHT™ MOSFET technology
- low RDSon
- dv/dt ruggedness
- fast intrinsic reverse diode
-
VDSS = 100V
-
ID25 = 1220A
-
RDS(on) = 1.25mΩ max
VMO1200-01F Applications
-
Converters with high power density for
- main and auxiliary AC drives of electric vehicles
- DC drives
- power supplies
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