US6U37TR
- Mfr.Part #
- US6U37TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SMD/SMT
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 1.5A TUMT6
- Stock
- 2,754
- In Stock :
- 2,754
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 15 ns
- Published :
- 2008
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- N-Channel
- Resistance :
- 340mOhm
- Input Capacitance :
- 80pF
- ECCN Code :
- EAR99
- Factory Lead Time :
- 10 Weeks
- Terminal Finish :
- TIN COPPER
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Gate to Source Voltage (Vgs) :
- 12V
- Terminal Position :
- Dual
- JESD-609 Code :
- e2
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 30V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 30V
- Min Operating Temperature :
- -55°C
- Continuous Drain Current (ID) :
- 1.5A
- Max Power Dissipation :
- 700mW
- Rds On Max :
- 240 mΩ
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Flat
- Turn On Delay Time :
- 7 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Fall Time (Typ) :
- 9 ns
- Rise Time :
- 9ns
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Package / Case :
- SMD/SMT
- Power Dissipation :
- 1W
- Max Operating Temperature :
- 150°C
- Number of Pins :
- 6
- Number of Terminations :
- 6
- Radiation Hardening :
- No
- Drain to Source Resistance :
- 240mOhm
- Pin Count :
- 6
- Datasheets
- US6U37TR

Tape & Reel (TR) 30V SMD/SMT
US6U37TR Overview
The drain current is the maximum continuous current the device can conduct, and this device has 1.5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 15 ns.This device has a drain-to-source resistance of 240mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).
US6U37TR Features
a continuous drain current (ID) of 1.5A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 240mOhm
a 30V drain to source voltage (Vdss)
US6U37TR Applications
There are a lot of ROHM Semiconductor
US6U37TR applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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