US6U37TR

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Mfr.Part #
US6U37TR
Manufacturer
ROHM Semiconductor
Package / Case
SMD/SMT
Datasheet
Download
Description
MOSFET N-CH 30V 1.5A TUMT6
Stock
2,754
In Stock :
2,754

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Radiation Hardening :
No
Terminal Finish :
TIN COPPER
Pbfree Code :
yes
Terminal Position :
Dual
Min Operating Temperature :
-55°C
Fall Time (Typ) :
9 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Surface Mount
Peak Reflow Temperature (Cel) :
260
Polarity/Channel Type :
N-Channel
Terminal Form :
Flat
Input Capacitance :
80pF
Time@Peak Reflow Temperature-Max (s) :
10
Gate to Source Voltage (Vgs) :
12V
Rds On Max :
240 mΩ
Drain to Source Breakdown Voltage :
30V
Number of Elements :
1
Package / Case :
SMD/SMT
Element Configuration :
Single
Published :
2008
Turn On Delay Time :
7 ns
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Max Power Dissipation :
700mW
Lead Free :
Lead Free
Drain to Source Voltage (Vdss) :
30V
Number of Terminations :
6
Turn-Off Delay Time :
15 ns
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code :
e2
Continuous Drain Current (ID) :
1.5A
Pin Count :
6
Rise Time :
9ns
Operating Mode :
ENHANCEMENT MODE
Max Operating Temperature :
150°C
Drain to Source Resistance :
240mOhm
Power Dissipation :
1W
Number of Pins :
6
Resistance :
340mOhm
Factory Lead Time :
10 Weeks
Datasheets
US6U37TR
Introducing Transistors - FETs, MOSFETs - Single ROHM Semiconductor US6U37TR from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SMD/SMT, Number of Terminations:6, Number of Pins:6, US6U37TR pinout, US6U37TR datasheet PDF, US6U37TR amp .Beyond Transistors - FETs, MOSFETs - Single ROHM Semiconductor US6U37TR ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor US6U37TR


Tape & Reel (TR) 30V SMD/SMT

US6U37TR Overview


The drain current is the maximum continuous current the device can conduct, and this device has 1.5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 15 ns.This device has a drain-to-source resistance of 240mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).

US6U37TR Features


a continuous drain current (ID) of 1.5A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 240mOhm
a 30V drain to source voltage (Vdss)


US6U37TR Applications


There are a lot of ROHM Semiconductor
US6U37TR applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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