UPA2826T1S-E2-AT
- Mfr.Part #
- UPA2826T1S-E2-AT
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- HWSON-8
- Datasheet
- Download
- Description
- 8P HWSON
- Stock
- 9,755
- In Stock :
- 9,755
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 27A (Ta)
- Transistor Polarity :
- P-Channel
- Manufacturer :
- Renesas Electronics
- Packaging :
- Reel
- FET Feature :
- -
- Transistor Type :
- 1 P-Channel
- Package / Case :
- HWSON-8
- Channel Mode :
- Enhancement
- Brand :
- Renesas Electronics
- Maximum Operating Temperature :
- + 150 C
- Drain to Source Voltage (Vdss) :
- 20 V
- Operating Temperature :
- 150°C
- Rds On (Max) @ Id, Vgs :
- 4.3mOhm @ 13.5A, 8V
- Height :
- 0.8 mm
- Terminal Finish :
- Matte Tin (Sn)
- RoHS :
- Details
- Drain Current-Max (Abs) (ID) :
- 27 A
- Number of Channels :
- 1 Channel
- Supplier Device Package :
- 8-HWSON (3.3x3.3)
- Vgs(th) (Max) @ Id :
- 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs :
- 37 nC @ 4 V
- Product Type :
- MOSFET
- Reach Compliance Code :
- Compliant
- Power Dissipation-Max (Abs) :
- 20 W
- Product Status :
- Active
- Length :
- 3.3 mm
- Surface Mount :
- yes
- Mounting Style :
- SMD/SMT
- Series :
- -
- Brand Name :
- Renesas
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On, Min Rds On) :
- 2.5V, 8V
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 3610 pF @ 10 V
- FET Type :
- N-Channel
- Width :
- 3.3 mm
- Configuration :
- Single
- Package :
- Tray
- Technology :
- Si
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Polarity/Channel Type :
- N-Channel
- Power Dissipation (Max) :
- 20W (Ta)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Category :
- MOSFET
- Vgs (Max) :
- ±12V
- Pin Count :
- 8
- Rise Time :
- 94 ns
- Subcategory :
- MOSFETs
- Datasheets
- UPA2826T1S-E2-AT
UPA2826T1S-E2-AT datasheet pdf and Unclassified product details from Renesas stock available at
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