UPA2826T1S-E2-AT

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Product Type :

MOSFET

Transistor Type :

1 P-Channel

Reach Compliance Code :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

3610 pF @ 10 V

Width :

3.3 mm

Supplier Device Package :

8-HWSON (3.3x3.3)

Product Category :

MOSFET

Series :

-

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Polarity :

P-Channel

Configuration :

Single

Height :

0.8 mm

Brand Name :

Renesas

Packaging :

Reel

Current - Continuous Drain (Id) @ 25°C :

27A (Ta)

Mounting Type :

Surface Mount

Channel Mode :

Enhancement

Gate Charge (Qg) (Max) @ Vgs :

37 nC @ 4 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 8V

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Polarity/Channel Type :

N-Channel

Drain Current-Max (Abs) (ID) :

27 A

Rds On (Max) @ Id, Vgs :

4.3mOhm @ 13.5A, 8V

Length :

3.3 mm

RoHS :

Details

Subcategory :

MOSFETs

Maximum Operating Temperature :

+ 150 C

Operating Temperature :

150°C

Package / Case :

HWSON-8

Manufacturer :

Renesas Electronics

FET Type :

N-Channel

Number of Channels :

1 Channel

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max (Abs) :

20 W

Technology :

Si

Pin Count :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±12V

JESD-609 Code :

e3

Surface Mount :

yes

Package :

Tray

Brand :

Renesas Electronics

Rise Time :

94 ns

Drain to Source Voltage (Vdss) :

20 V

FET Feature :

-

Product Status :

Active

Power Dissipation (Max) :

20W (Ta)

Mounting Style :

SMD/SMT