UPA2751GR-E1-A

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Mfr.Part #
UPA2751GR-E1-A
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Stock
7,500
In Stock :
7,500

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
9 A
Subcategory :
FET General Purpose Power
Package :
Bulk
Reach Compliance Code :
Unknown
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance :
15.5 mΩ
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
30 V
RoHS :
Compliant
Drain to Source Voltage (Vdss) :
30 V
Brand Name :
Renesas
Factory Lead Time :
1 Week
Resistance :
15.5 mΩ
Drain Current-Max (Abs) (ID) :
9 A
Pbfree Code :
yes
Product Status :
Active
Polarity/Channel Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
20 V
Power Dissipation-Max (Abs) :
2 W
Manufacturer :
Renesas Electronics Corporation
Power Dissipation :
1.7 W
Series :
*
Pin Count :
8
Surface Mount :
yes
Number of Pins :
8
Datasheets
UPA2751GR-E1-A
Introducing Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) UPA2751GR-E1-A from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, UPA2751GR-E1-A pinout, UPA2751GR-E1-A datasheet PDF, UPA2751GR-E1-A amp .Beyond Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) UPA2751GR-E1-A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) UPA2751GR-E1-A


30 V

UPA2751GR-E1-A Overview


In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30 V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30 V.There is no drain current on this device since the maximum continuous current it can conduct is 9 A.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 15.5 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20 VV.The transistor must receive a 30 V drain to source voltage (Vdss) in order to function.

UPA2751GR-E1-A Features


a continuous drain current (ID) of 9 A
a drain-to-source breakdown voltage of 30 V voltage
single MOSFETs transistor is 15.5 mΩ
a 30 V drain to source voltage (Vdss)


UPA2751GR-E1-A Applications


There are a lot of Renesas
UPA2751GR-E1-A applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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