UPA2739T1A-E2-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

150°C TJ

Published :

2012

DS Breakdown Voltage-Min :

30V

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Factory Lead Time :

16 Weeks

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

85A

Package / Case :

8-PowerVDFN

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 23A, 4.5V

Number of Terminations :

5

JESD-30 Code :

R-PDSO-N5

Current - Continuous Drain (Id) @ 25°C :

85A Ta

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

153nC @ 10V

FET Type :

P-Channel

Power Dissipation-Max :

1.5W Ta

Rise Time :

140ns

Turn-Off Delay Time :

310 ns

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

30V

Number of Pins :

8

Turn On Delay Time :

27 ns

Mount :

Surface Mount

Power Dissipation :

1.5W

Radiation Hardening :

No

Fall Time (Typ) :

490 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

6050pF @ 10V

Pin Count :

8