UPA2718AGR-E1-AT

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Package :

Bulk

Terminal Form :

Gull wing

Number of Elements :

1

Number of Terminals :

8

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

13A (Ta)

Rds On (Max) @ Id, Vgs :

9mOhm @ 6.5A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating (Eas) :

16.9 mJ

Factory Lead Time :

1 Week

Technology :

MOSFET (Metal Oxide)

Subcategory :

Other Transistors

Package Shape :

RECTANGULAR

Drain-source On Resistance-Max :

0.0182 Ω

Power Dissipation :

2 W

ECCN Code :

EAR99

Pin Count :

8

Polarity/Channel Type :

P-Channel

Drain to Source Voltage (Vdss) :

30 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

13 A

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Transistor Element Material :

SILICON

RoHS :

Compliant

Qualification Status :

Not Qualified

Series :

-

Input Capacitance (Ciss) (Max) @ Vds :

2810 pF @ 10 V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

67 nC @ 10 V

Number of Pins :

8

Surface Mount :

yes

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

13 A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

2 W

Operating Mode :

ENHANCEMENT MODE

Min Operating Temperature :

-55 °C

JESD-609 Code :

e3

Supplier Device Package :

8-PSOP

Product Status :

Obsolete

Gate to Source Voltage (Vgs) :

20 V

Max Operating Temperature :

150 °C

Mount :

Surface Mount

Brand Name :

Renesas

Terminal Finish :

Matte Tin (Sn)

Package / Case :

8-SOIC (0.173, 4.40mm Width)

FET Feature :

-

DS Breakdown Voltage-Min :

30 V

Reach Compliance Code :

Compliant

Pulsed Drain Current-Max (IDM) :

130 A

Manufacturer :

Renesas Electronics Corporation

JESD-30 Code :

R-PDSO-G8

FET Type :

P-Channel