UPA2716AGR-E1-AT

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Mfr.Part #
UPA2716AGR-E1-AT
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
8-SOIC (0.173, 4.40mm Width)
Datasheet
Download
Description
MOSFET P-CH 30V 14A 8PSOP
Stock
6,963
In Stock :
6,963

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
20 V
Product Status :
Obsolete
Mounting Type :
Surface Mount
DS Breakdown Voltage-Min :
30 V
Turn-On Delay Time :
14 ns
Series :
-
Current - Continuous Drain (Id) @ 25°C :
14A (Ta)
Lead Free :
Lead Free
Pin Count :
8
Avalanche Energy Rating (Eas) :
19.6 mJ
Reach Compliance Code :
Compliant
Gate Charge (Qg) (Max) @ Vgs :
95 nC @ 10 V
Turn-Off Delay Time :
680 ns
Number of Terminals :
8
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Package / Case :
8-SOIC (0.173, 4.40mm Width)
FET Feature :
-
Brand Name :
Renesas
Input Capacitance (Ciss) (Max) @ Vds :
3000 pF @ 10 V
Supplier Device Package :
8-PSOP
Subcategory :
Other Transistors
Pulsed Drain Current-Max (IDM) :
140 A
Pbfree Code :
yes
Min Operating Temperature :
-55 °C
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs(th) (Max) @ Id :
-
Qualification Status :
Not Qualified
Factory Lead Time :
1 Week
Drain to Source Resistance :
7 mΩ
Input Capacitance :
3 nF
Transistor Element Material :
SILICON
Power Dissipation (Max) :
2W (Ta)
Terminal Position :
Dual
Technology :
MOSFET (Metal Oxide)
ECCN Code :
EAR99
Max Operating Temperature :
150 °C
Polarity/Channel Type :
P-Channel
Terminal Form :
Gull wing
Operating Temperature :
150°C (TJ)
Number of Elements :
1
Surface Mount :
yes
Rds On (Max) @ Id, Vgs :
7mOhm @ 7A, 10V
Manufacturer :
Renesas Electronics Corporation
Transistor Application :
SWITCHING
Package :
Bulk
FET Type :
P-Channel
Drain Current-Max (Abs) (ID) :
14 A
Radiation Hardening :
No
Package Shape :
RECTANGULAR
Rds On Max :
7 mΩ
Number of Pins :
8
Max Power Dissipation :
2 W
Rise Time :
19 ns
RoHS :
Compliant
JESD-30 Code :
R-PDSO-G8
Power Dissipation-Max (Abs) :
2 W
Drain-source On Resistance-Max :
0.0135 Ω
Continuous Drain Current (ID) :
14 A
Drain to Source Voltage (Vdss) :
30 V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
UPA2716AGR-E1-AT
Introducing Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) UPA2716AGR-E1-AT from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:8-SOIC (0.173, 4.40mm Width), Operating Temperature:150°C (TJ), Number of Pins:8, UPA2716AGR-E1-AT pinout, UPA2716AGR-E1-AT datasheet PDF, UPA2716AGR-E1-AT amp .Beyond Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) UPA2716AGR-E1-AT ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) UPA2716AGR-E1-AT


MOSFET (Metal Oxide) P-Channel 7mOhm @ 7A, 10V 3000 pF @ 10 V 95 nC @ 10 V 30 V 8-SOIC (0.173, 4.40mm Width)

UPA2716AGR-E1-AT Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 19.6 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3000 pF @ 10 V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 14 A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 14 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 680 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 140 A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 7 MΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20 V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30 V in order to maintain normal operation.Operating this transistor requires a 30 V drain to source voltage (Vdss).

UPA2716AGR-E1-AT Features


the avalanche energy rating (Eas) is 19.6 mJ
a continuous drain current (ID) of 14 A
the turn-off delay time is 680 ns
based on its rated peak drain current 140 A.
single MOSFETs transistor is 7 MΩ
a 30 V drain to source voltage (Vdss)


UPA2716AGR-E1-AT Applications


There are a lot of Renesas
UPA2716AGR-E1-AT applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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