UPA2716AGR-E1-AT
- Mfr.Part #
- UPA2716AGR-E1-AT
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- 8-SOIC (0.173, 4.40mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 14A 8PSOP
- Stock
- 6,963
- In Stock :
- 6,963
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20 V
- Product Status :
- Obsolete
- Mounting Type :
- Surface Mount
- DS Breakdown Voltage-Min :
- 30 V
- Turn-On Delay Time :
- 14 ns
- Series :
- -
- Current - Continuous Drain (Id) @ 25°C :
- 14A (Ta)
- Lead Free :
- Lead Free
- Pin Count :
- 8
- Avalanche Energy Rating (Eas) :
- 19.6 mJ
- Reach Compliance Code :
- Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 95 nC @ 10 V
- Turn-Off Delay Time :
- 680 ns
- Number of Terminals :
- 8
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- 8-SOIC (0.173, 4.40mm Width)
- FET Feature :
- -
- Brand Name :
- Renesas
- Input Capacitance (Ciss) (Max) @ Vds :
- 3000 pF @ 10 V
- Supplier Device Package :
- 8-PSOP
- Subcategory :
- Other Transistors
- Pulsed Drain Current-Max (IDM) :
- 140 A
- Pbfree Code :
- yes
- Min Operating Temperature :
- -55 °C
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- -
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 1 Week
- Drain to Source Resistance :
- 7 mΩ
- Input Capacitance :
- 3 nF
- Transistor Element Material :
- SILICON
- Power Dissipation (Max) :
- 2W (Ta)
- Terminal Position :
- Dual
- Technology :
- MOSFET (Metal Oxide)
- ECCN Code :
- EAR99
- Max Operating Temperature :
- 150 °C
- Polarity/Channel Type :
- P-Channel
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C (TJ)
- Number of Elements :
- 1
- Surface Mount :
- yes
- Rds On (Max) @ Id, Vgs :
- 7mOhm @ 7A, 10V
- Manufacturer :
- Renesas Electronics Corporation
- Transistor Application :
- SWITCHING
- Package :
- Bulk
- FET Type :
- P-Channel
- Drain Current-Max (Abs) (ID) :
- 14 A
- Radiation Hardening :
- No
- Package Shape :
- RECTANGULAR
- Rds On Max :
- 7 mΩ
- Number of Pins :
- 8
- Max Power Dissipation :
- 2 W
- Rise Time :
- 19 ns
- RoHS :
- Compliant
- JESD-30 Code :
- R-PDSO-G8
- Power Dissipation-Max (Abs) :
- 2 W
- Drain-source On Resistance-Max :
- 0.0135 Ω
- Continuous Drain Current (ID) :
- 14 A
- Drain to Source Voltage (Vdss) :
- 30 V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- UPA2716AGR-E1-AT

MOSFET (Metal Oxide) P-Channel 7mOhm @ 7A, 10V 3000 pF @ 10 V 95 nC @ 10 V 30 V 8-SOIC (0.173, 4.40mm Width)
UPA2716AGR-E1-AT Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 19.6 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3000 pF @ 10 V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 14 A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 14 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 680 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 140 A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 7 MΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20 V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30 V in order to maintain normal operation.Operating this transistor requires a 30 V drain to source voltage (Vdss).
UPA2716AGR-E1-AT Features
the avalanche energy rating (Eas) is 19.6 mJ
a continuous drain current (ID) of 14 A
the turn-off delay time is 680 ns
based on its rated peak drain current 140 A.
single MOSFETs transistor is 7 MΩ
a 30 V drain to source voltage (Vdss)
UPA2716AGR-E1-AT Applications
There are a lot of Renesas
UPA2716AGR-E1-AT applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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