UPA2709GR-E1-A
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- Mfr.Part #
- UPA2709GR-E1-A
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 2,994
- In Stock ：
- 2,994
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Bulk
- JESD-30 Code :
- R-PDSO-G8
- RoHS :
- Non-Compliant
- Avalanche Energy Rating (Eas) :
- 17 mJ
- Polarity/Channel Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Package Shape :
- RECTANGULAR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pulsed Drain Current-Max (IDM) :
- 52 A
- Continuous Drain Current (ID) :
- 13 A
- Product Status :
- Active
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3/e6
- Gate to Source Voltage (Vgs) :
- 20 V
- Drain-source On Resistance-Max :
- 0.015 Ω
- DS Breakdown Voltage-Min :
- 30 V
- Number of Elements :
- 1
- Drain to Source Resistance :
- 8.3 mΩ
- Qualification Status :
- Not Qualified
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Number of Terminals :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- MATTE TIN/TIN BISMUTH
- Manufacturer :
- NEC Electronics America Inc
- Terminal Form :
- Gull wing
- Series :
- *
- Drain to Source Voltage (Vdss) :
- 30 V
- Drain to Source Breakdown Voltage :
- 30 V
- Transistor Application :
- SWITCHING
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation :
- 1.1 W
- Datasheets
- UPA2709GR-E1-A
30 V
UPA2709GR-E1-A Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 17 mJ.This device has a continuous drain current (ID) of [13 A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30 V, the drain-source breakdown voltage is 30 V.A maximum pulsed drain current of 52 A is the maximum peak drain current rated for this device.MOSFETs have 8.3 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20 V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30 V.In order to operate this transistor, a voltage of 30 V is needed from the drain to the source (Vdss).
UPA2709GR-E1-A Features
the avalanche energy rating (Eas) is 17 mJ
a continuous drain current (ID) of 13 A
a drain-to-source breakdown voltage of 30 V voltage
based on its rated peak drain current 52 A.
single MOSFETs transistor is 8.3 mΩ
a 30 V drain to source voltage (Vdss)
UPA2709GR-E1-A Applications
There are a lot of Renesas
UPA2709GR-E1-A applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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