UPA2708GR-E2-A

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Mfr.Part #
UPA2708GR-E2-A
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Stock
92,500
In Stock :
92,500

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Transistors - FETs, MOSFETs - Single
Manufacturer :
NEC Electronics Group
Package :
Bulk
Qualification Status :
Not Qualified
Number of Terminals :
8
Product Status :
Active
JESD-609 Code :
e6
Terminal Finish :
TIN BISMUTH
Polarity/Channel Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
Pin Count :
8
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current (ID) :
17 A
Number of Elements :
1
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code :
R-PDSO-G8
DS Breakdown Voltage-Min :
30 V
Power Dissipation :
1.1 W
Terminal Form :
Gull wing
Transistor Application :
SWITCHING
Package Shape :
RECTANGULAR
Drain-source On Resistance-Max :
0.0075 Ω
Avalanche Energy Rating (Eas) :
28.9 mJ
Surface Mount :
yes
Terminal Position :
Dual
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
30 V
Reach Compliance Code :
Compliant
Transistor Element Material :
SILICON
Pulsed Drain Current-Max (IDM) :
68 A
Series :
*
Drain to Source Resistance :
5.6 mΩ
Datasheets
UPA2708GR-E2-A
Introducing Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) UPA2708GR-E2-A from Chip IC,where excellence meets affordability. This product stands out with its UPA2708GR-E2-A pinout, UPA2708GR-E2-A datasheet PDF, UPA2708GR-E2-A amp .Beyond Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) UPA2708GR-E2-A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) UPA2708GR-E2-A




UPA2708GR-E2-A Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 28.9 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 17 A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30 V, and this device has a drainage-to-source breakdown voltage of 30 VV.Peak drain current is 68 A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 5.6 mΩ when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Normal operation requires that the DS breakdown voltage remain above 30 V.

UPA2708GR-E2-A Features


the avalanche energy rating (Eas) is 28.9 mJ
a continuous drain current (ID) of 17 A
a drain-to-source breakdown voltage of 30 V voltage
based on its rated peak drain current 68 A.
single MOSFETs transistor is 5.6 mΩ


UPA2708GR-E2-A Applications


There are a lot of Renesas
UPA2708GR-E2-A applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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