UPA2708GR-E2-A
- Mfr.Part #
- UPA2708GR-E2-A
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 92,500
- In Stock :
- 92,500
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Manufacturer :
- NEC Electronics Group
- Package :
- Bulk
- Qualification Status :
- Not Qualified
- Number of Terminals :
- 8
- Product Status :
- Active
- JESD-609 Code :
- e6
- Terminal Finish :
- TIN BISMUTH
- Polarity/Channel Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pin Count :
- 8
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 17 A
- Number of Elements :
- 1
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- R-PDSO-G8
- DS Breakdown Voltage-Min :
- 30 V
- Power Dissipation :
- 1.1 W
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Package Shape :
- RECTANGULAR
- Drain-source On Resistance-Max :
- 0.0075 Ω
- Avalanche Energy Rating (Eas) :
- 28.9 mJ
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 30 V
- Reach Compliance Code :
- Compliant
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 68 A
- Series :
- *
- Drain to Source Resistance :
- 5.6 mΩ
- Datasheets
- UPA2708GR-E2-A

UPA2708GR-E2-A Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 28.9 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 17 A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30 V, and this device has a drainage-to-source breakdown voltage of 30 VV.Peak drain current is 68 A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 5.6 mΩ when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Normal operation requires that the DS breakdown voltage remain above 30 V.
UPA2708GR-E2-A Features
the avalanche energy rating (Eas) is 28.9 mJ
a continuous drain current (ID) of 17 A
a drain-to-source breakdown voltage of 30 V voltage
based on its rated peak drain current 68 A.
single MOSFETs transistor is 5.6 mΩ
UPA2708GR-E2-A Applications
There are a lot of Renesas
UPA2708GR-E2-A applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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