UPA2708GR-E1-A

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0075Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

30 V

Terminal Position :

Dual

Power Dissipation :

1.1 W

Number of Elements :

1

Power Dissipation-Max (Abs) :

2.5W

Continuous Drain Current (ID) :

17 A

Pin Count :

8

Pulsed Drain Current-Max (IDM) :

68A

Drain Current-Max (Abs) (ID) :

17A

Operating Temperature (Max) :

150°C

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G8

Drain to Source Breakdown Voltage :

30 V

Pbfree Code :

yes

ECCN Code :

EAR99

Number of Terminals :

8

Gate to Source Voltage (Vgs) :

20 V

Drain to Source Resistance :

5.5 mΩ

DS Breakdown Voltage-Min :

30V

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

Compliant

Surface Mount :

yes

Factory Lead Time :

[object Object]

RoHS :

Non-Compliant

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

28.9 mJ