UPA1740TP-E1-AZ
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- Mfr.Part #
- UPA1740TP-E1-AZ
- Manufacturer
- Renesas Electronics Corporation
- Package / Case
- 8-PowerSOIC (0.173, 4.40mm Width)
- Datasheet
- Download
- Description
- UPA1740TP-E1-AZ - MOS FIELD EFFE
- Stock
- 50,000
- In Stock ：
- 50,000
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- Manufacturer :
- Renesas Electronics Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 8
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- RoHS :
- Non-Compliant
- Vgs (Max) :
- ±30V
- Pin Count :
- 8
- Continuous Drain Current (ID) :
- 7 A
- Series :
- -
- Power Dissipation (Max) :
- 1W (Ta), 22W (Tc)
- Drain to Source Breakdown Voltage :
- 200 V
- Technology :
- MOSFET (Metal Oxide)
- Supplier Device Package :
- 8-HSOP
- Operating Temperature :
- 150°C
- Product Status :
- Obsolete
- Drain to Source Voltage (Vdss) :
- 200 V
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Package :
- Bulk
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 7A (Tc)
- Gate to Source Voltage (Vgs) :
- 30 V
- Mounting Type :
- Surface Mount
- Drain to Source Resistance :
- 350 mΩ
- Rds On (Max) @ Id, Vgs :
- 440mOhm @ 3.5A, 10V
- Package / Case :
- 8-PowerSOIC (0.173, 4.40mm Width)
- FET Feature :
- -
- Reach Compliance Code :
- Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- Renesas Electronics Corporation
- Input Capacitance (Ciss) (Max) @ Vds :
- 420 pF @ 10 V
- Gate Charge (Qg) (Max) @ Vgs :
- 12 nC @ 10 V
- Brand Name :
- Renesas
- Power Dissipation :
- 22 W
- Datasheets
- UPA1740TP-E1-AZ
MOSFET (Metal Oxide) N-Channel 440mOhm @ 3.5A, 10V ±30V 420 pF @ 10 V 12 nC @ 10 V 200 V 8-PowerSOIC (0.173, 4.40mm Width)
UPA1740TP-E1-AZ Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 420 pF @ 10 V.This device conducts a continuous drain current (ID) of 7 A, which is the maximum continuous current transistor can conduct.Using VGS=200 V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200 V (that is, no charge flow from drain to source).When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 350 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30 V.This transistor requires a drain-source voltage (Vdss) of 200 V.
UPA1740TP-E1-AZ Features
a continuous drain current (ID) of 7 A
a drain-to-source breakdown voltage of 200 V voltage
single MOSFETs transistor is 350 mΩ
a 200 V drain to source voltage (Vdss)
UPA1740TP-E1-AZ Applications
There are a lot of Renesas
UPA1740TP-E1-AZ applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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