TW083N65C,S1F

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Mfr.Part #
TW083N65C,S1F
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-247-3
Datasheet
Download
Description
G3 650V SIC-MOSFET TO-247 83MOH
Stock
162
In Stock :
162

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
-
Rds On (Max) @ Id, Vgs :
113mOhm @ 15A, 18V
Packaging :
Tube
FET Type :
N-Channel
Rise Time :
41 ns
Power Dissipation (Max) :
111W (Tc)
FET Feature :
-
Mounting Style :
Through Hole
Drain to Source Voltage (Vdss) :
650 V
Package :
Tube
Channel Mode :
Enhancement
Maximum Operating Temperature :
+ 175 C
Product Type :
MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
873 pF @ 400 V
Vgs(th) (Max) @ Id :
5V @ 600μA
Product Category :
MOSFET
Brand :
Toshiba
Product Status :
Active
Minimum Operating Temperature :
- 55 C
Mounting Type :
Through Hole
Supplier Device Package :
TO-247
RoHS :
Details
Number of Channels :
1 Channel
Drive Voltage (Max Rds On, Min Rds On) :
18V
Package / Case :
TO-247-3
Manufacturer :
Toshiba
Vgs (Max) :
+25V, -10V
Current - Continuous Drain (Id) @ 25°C :
30A (Tc)
Operating Temperature :
175°C
Gate Charge (Qg) (Max) @ Vgs :
28 nC @ 18 V
Transistor Polarity :
N-Channel
Subcategory :
MOSFETs
Datasheets
TW083N65C,S1F
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TW083N65C,S1F from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Package / Case:TO-247-3, Operating Temperature:175°C, TW083N65C,S1F pinout, TW083N65C,S1F datasheet PDF, TW083N65C,S1F amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TW083N65C,S1F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TW083N65C,S1F


N-Channel Tube 113mOhm @ 15A, 18V +25V, -10V 873 pF @ 400 V 28 nC @ 18 V 650 V TO-247-3

TW083N65C,S1F Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 873 pF @ 400 V.The transistor must receive a 650 V drain to source voltage (Vdss) in order to function.

TW083N65C,S1F Features


a 650 V drain to source voltage (Vdss)


TW083N65C,S1F Applications


There are a lot of Toshiba Semiconductor and Storage
TW083N65C,S1F applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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