TW070J120B,S1Q

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Mfr.Part #
TW070J120B,S1Q
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
SICFET N-CH 1200V 36A TO3P
Stock
1
In Stock :
1

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
FET Feature :
Standard
Manufacturer :
Toshiba
Base Product Number :
TW070J120
Supplier Device Package :
TO-3P(N)
Rise Time :
7 ns
Brand :
Toshiba
Product Category :
MOSFET
Number of Channels :
1 Channel
Packaging :
Tube
Vgs (Max) :
±25V, -10V
FET Type :
N-Channel
Channel Mode :
Enhancement
Operating Temperature :
-55°C ~ 175°C
Vgs(th) (Max) @ Id :
5.8V @ 20mA
Gate Charge (Qg) (Max) @ Vgs :
67 nC @ 20 V
Series :
-
Subcategory :
MOSFETs
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Product Status :
Active
Package / Case :
TO-3P-3, SC-65-3
Drive Voltage (Max Rds On, Min Rds On) :
20V
Rds On (Max) @ Id, Vgs :
90mOhm @ 18A, 20V
Mounting Style :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
1680 pF @ 800 V
Product Type :
MOSFET
Transistor Polarity :
N-Channel
Power Dissipation (Max) :
272W (Tc)
Mounting Type :
Through Hole
Drain to Source Voltage (Vdss) :
1200 V
Current - Continuous Drain (Id) @ 25°C :
36A (Tc)
Configuration :
Single
Package :
Tube
Transistor Type :
1 N-Channel
RoHS :
Details
Datasheets
TW070J120B,S1Q
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TW070J120B,S1Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C ~ 175°C, Package / Case:TO-3P-3, SC-65-3, Mounting Type:Through Hole, TW070J120B,S1Q pinout, TW070J120B,S1Q datasheet PDF, TW070J120B,S1Q amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TW070J120B,S1Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TW070J120B,S1Q


N-Channel Tube 90mOhm @ 18A, 20V ±25V, -10V 1680 pF @ 800 V 67 nC @ 20 V 1200 V TO-3P-3, SC-65-3

TW070J120B,S1Q Overview


A device's maximal input capacitance is 1680 pF @ 800 V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 1200 V drain to source voltage (Vdss).

TW070J120B,S1Q Features


a 1200 V drain to source voltage (Vdss)


TW070J120B,S1Q Applications


There are a lot of Toshiba Semiconductor and Storage
TW070J120B,S1Q applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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