TW048N65C,S1F

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Product Type :

MOSFET

Vgs (Max) :

+25V, -10V

Gate Charge (Qg) (Max) @ Vgs :

41 nC @ 18 V

Package :

Tube

Operating Temperature :

175°C

Mounting Style :

Through Hole

Drain to Source Voltage (Vdss) :

650 V

Product Status :

Active

Manufacturer :

Toshiba

Package / Case :

TO-247-3

Mounting Type :

Through Hole

Channel Mode :

Enhancement

FET Feature :

-

Number of Channels :

1 Channel

Subcategory :

MOSFETs

Drive Voltage (Max Rds On, Min Rds On) :

18V

Minimum Operating Temperature :

- 55 C

Product Category :

MOSFET

Power Dissipation (Max) :

132W (Tc)

Rds On (Max) @ Id, Vgs :

65mOhm @ 20A, 18V

RoHS :

Details

Current - Continuous Drain (Id) @ 25°C :

40A (Tc)

Supplier Device Package :

TO-247

Maximum Operating Temperature :

+ 175 C

Input Capacitance (Ciss) (Max) @ Vds :

1362 pF @ 400 V

FET Type :

N-Channel

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 1.6mA

Rise Time :

43 ns

Series :

-

Brand :

Toshiba

Packaging :

Tube